5. This problem concerns a junction with a heavily doped n-type region, a thin intrinsic layer, and a moderately doped p-type region as sketched below. Assume the depletion approximation and assume that the width of the depletion region on the P-side is significantly greater than the thickness of the intrinsic layer. No-N No=1018 Intrinsic layer N = 1015 (a) Sketch the electric field vs. position assuming the depletion approximation. (b) Using the sketch in (a), develop an expression for the depletion layer width in the pregion. Your answer should be in terms of Vbi and NA. (c) Compare this structure to the same structure without the intrinsic layer. Explain what effect the intrinsic layer will have on the built-in potential, Vbi. (d) Compare this structure to the same structure without the intrinsic layer. Explain what effect the intrinsic layer will have on the maximum electric field in the junction