Question: Using the improved drain current model with linearized distributed body effect ( local effective threshold voltage linearly dependent on VCB ) , compare the current

Using the improved drain current model with linearized distributed body
effect (local effective threshold voltage linearly dependent on VCB), compare
the current in a series connected pair of identical nMOS transistors with gates
tied together to that in a similar device with same width but twice the channel
length. Use the linearized body effect with single value of delta throughout

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