Question: When a bias V = -0.5V is applied to the metal side of a metal-silicon junction, the junction has the capacitance of 0.25 pF.

When a bias V = -0.5V is applied to the metal side of a metal-silicon junction, the junction has the

When a bias V = -0.5V is applied to the metal side of a metal-silicon junction, the junction has the capacitance of 0.25 pF. A bias of 0.1 V results in a capacitance of 0.05 pF. The junction area A = 2. 10-5 cm, and the temperature T = 300 K. (a) (i) Is the semiconductor of p- or n-type? (ii) Is the metal work function higher or lower than the semiconductor's? (iii) At what value of the applied voltage does the space-charge region in the semiconductor begin to appear? Justify your answers to questions (i) and (ii) without doing calculations. (b) What is the doping level of the semiconductor? (c) What is the value of the metal work function?

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To determine whether the semiconductor is ptype or ntype we can use the information provided about the capacitancevoltage CV characteristics of the metalsilicon junction Given Capacitance at bias V 05 ... View full answer

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