Write down the bit pattern stored in this NAND EEPROM. Assume that the floating gates indicated by a*have charge stored on them, whereas the other floating gates have no stored charge. In normal read operation the ground select transistor and the bit-line select transistor will be turned on. Unselected word lines will be set to a high voltage, sufficient to overcome any stored charge and turn on the transistor, while the word line of the cell being read will be set to a lower voltage, high enough to turn on a transistor that has no stored charge, but not high enough to turn on a transistor with stored charge. 0 Ground- select Word Word line 1 Word line 2 Word line 3 Word line 4 Word line 5 Word line 6 Word line 7 Bit line- select transistor transistor line 0 B1 Ground- select Word Word line 1 Word line 2 Word line 3 Word line 4 Word line 5 Word line 6 Word line 7 Bit line- select transistor transistor line 0 B2 Ground- select Word Word line 1 Word line 2 Word line 3 Word line 4 Word line 5 Word line 6 Word line 7 Bit line- select transistor transistor line 0