XRD experiments $($in the $-2$ scanning mode$)$ are performed on a $4$ diameter single$-$crystalline Si wafer with a $(100)$ surface orientation. A uniform tensile stress is applied along the $[010]$ direction of the Si sample $($i$.$e$.$ pulling on the edges of the sample$).$ How does this in$-$situ mechanical testing change the XRD pattern, as compared to the stress$-$free situation?

A$.$ The peak position of the $(400)$ diffraction peak will remain at the same diffraction angle; however, the peak width will have a noticeable increase.

B$.$ The $(400)$ diffraction peak will shift to higher diffraction angles without any noticeable change in the peak width.

C$.$ The $(400)$ diffraction peak will shift to lower diffraction angles without any noticeable change in the peak width.

D$.$ The $(400)$ diffraction peak will shift to higher diffraction angles with a noticeable increase in the peak width.

E$.$ The $(400)$ diffraction peak will shift to lower diffraction angles with a noticeable increase in the peak width.