A MESFET (metal–semiconductor FET) is made using a Schottky barrier at a metal-doped semiconductor junction instead of an oxide barrier, as in a MOSFET, or p–n junction as in a JFET. For an n-doped channel, the drain and source are connected to the conducting channel using n+ doped regions, and an undoped substrate is used. Sketch the band bending for the junctions of a metal (with Fermi level inside the gap of the semiconductor), n-doped semiconductor, and undoped semiconductor in equilibrium. From this sketch, what do you expect the I–V characteristic of this device to look like; in particular, will the channel conduct at V_GS = 0? Will this device operate more like a MOSFET or a JFET?