Plot I D versus V GS for an n channel MOSFET with W 1 micro m, L 1 micro m, k 54 micro A V 2 , Icirc raquo 0, V DS 5 V, V SB 0, V t0 0 7 V, and deg c 1 5 Atilde 10 6 V m Ignore sub threshold conduction Compare the plot with Fig 1 44a and explain the main difference for large V GS Fig 1 44(a) (HA)1 ...

Plot I D versus V GS for an n-channel MOSFET with W = 1 µm, L =

Question:

Plot ˆšI_Dversus V_GSfor an n-channel MOSFET with W = 1 µm, L = 1 µm, k€™ = 54 µA/V², Î» = 0, V_DS= 5 V, V_SB= 0, V_t0= 0.7 V, and „°_c= 1.5 Ã— 10⁶V/m. Ignore sub threshold conduction. Compare the plot with Fig. 1.44a and explain the main difference for large V_GS.

Fig. 1.44(a)

(HA)1/2 20 15 10 Vps = 5 V W = 20 µm L= 20 μm 5 VGs (V) 4 Extrapolated V, = 0.7 V LO