$1.$ Consider an n$-$type MOSFET with an oxide thickness tox $=20$ nm $($r $=3\mathrm{.}9)$ and a gate$$length$,$L$=1$micron$,$a$$gate$$width$,$W$=10$micron$$and$$a$$threshold$$voltage$,$VT$=1$Volt$.$Calculate the capacitance per unit area of the oxide, COX, and from it the capacitance$$of the gate, CG$.$ Calculate the drain current, ID$,$ at a gate$-$source voltage, VGS $=3$ Volt$$and a drain$-$source voltage, VDS $=0\mathrm{.}05$ Volt. The surface mobility of the electrons $$n $=300$cm$2/$V$-$sec$.$

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