Question: 1. Transistor parameters An NMOS transistor has an electron mobility value of ux= 560 cm /volt-sec and a gate oxide with thickness of fox =

1. Transistor parameters An NMOS transistor has an electron mobility value of ux= 560 cm /volt-sec and a gate oxide with thickness of fox = 90A. The gate voltage is given as Ies, = 2.5V, and the threshold voltage I'm = 0.65 V. Assume that Ear = 3.45x10" F/cm. (a) Calculate the oxide capacitance per unit area, Car, of the device. (b) Find the gain factor of the device, By (By = PNOWN tox L An is also denoted as k. in some book), if the transistor has channel length L = 0.25 um and width W = 2 um. (c) Calculate the gain factor again for a transistor with W = 4 um and the same channel length. What impact does the transistor width have on the transistor characteristics? Please state clearly any assumption you make

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