Question: 2. In a particular MOS device, the effective gate dielectric thickness is 0.7 nm and gate area is 17 nm x 17 nm, leading to
2. In a particular MOS device, the effective gate dielectric thickness is 0.7 nm and gate area is 17 nm x 17 nm, leading to a gate capacitance of 1.4 x 10-17 F. How many sodium ions (Na ) in the gate dielectric would it take to shift the threshold voltage by 0.1 V and thereby interfere with the functionality of the integrated circuit containing the device
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