Question: 3 . ( Sedra P 5 . 1 0 ) Consider a CMOS process for which Lmin = 0 . 1 8 m , tox

3.(Sedra P5.10) Consider a CMOS process for which Lmin =0.18 m,tox =4 nm,n =450 cm2/V s, and Vt =0.5 V.
(a) Find Cox and k'n..
(b) For an NMOS transistor with W/L =2.4m/0.18m, calculate the values of vOV ,vGS, and vDSmin needed to operate the transistor in the saturation region with a current iD =0.1 mA.
(c) For the device in (b), find the values of vOV and vGS required to cause the device to operate as a 500 resistor for very small vDS.

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