Question: 5 - 7 6 . In Orthogonal Design for Process Optimization and Its Application to Plasma Etching ( Solid State Technology, May 1 9 8
In Orthogonal Design for Process Optimization and Its Application to Plasma EtchingSolid State Technology, May G Z Yin and D W Jillie describe an experiment to determine the effect of CF flow rate on the uniformity of the etch on a silicon wafer used in integrated circuit manufactur ing. Three flow rates are used in the experiment, and the result ing uniformity in percent for six replicates is shown here
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