Question: A . A N b O 2 semiconductor at temperatures greater than 1 0 0 0 C contains doubly - charged, oxygen vacancies. Your colleague

A.ANbO2 semiconductor at temperatures greater than 1000C contains doubly-charged, oxygen vacancies. Your colleague argues strongly that these oxygen ionic defects convert NbO2 lattice into a p-type semiconductor when the defects form with WO3 dopants - is he correct and give your reasoning?
B. Is the semiconductor n-type or p-type, if Nd2O3 is added to NbO2 and give your reasoning?
A . A N b O 2 semiconductor at temperatures

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