Question: A . A N b O 2 semiconductor at temperatures greater than 1 0 0 0 C contains doubly - charged, oxygen vacancies. Your colleague
A semiconductor at temperatures greater than contains doublycharged, oxygen vacancies. Your colleague argues strongly that these oxygen ionic defects convert lattice into a ptype semiconductor when the defects form with dopants is he correct and give your reasoning?
B Is the semiconductor ntype or ptype, if is added to and give your reasoning?
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