. A metal, with a work function of 4.2 V, is deposited on an n-type silicon semiconductor with electron affinity of 4.0 V and bandgap of 1.12 eV. Assume no interface states exist at the junction. Let T= 300K, no band-gap narrowing, intrinsic carrier concentration (n) of the Si is 1.5 x 10 0 cm, and completely ionization (a) Sketch the energy-band diagram for zero bias for the case when no space charge (depletion) region exist at the junction and indicate the barrier height seen by electrons in the metal. (b) Determine Na so that the condition in part (a) is satisfied . A metal, with a work function of 4.2 V, is deposited on an n-type silicon semiconductor with electron affinity of 4.0 V and bandgap of 1.12 eV. Assume no interface states exist at the junction. Let T= 300K, no band-gap narrowing, intrinsic carrier concentration (n) of the Si is 1.5 x 10 0 cm, and completely ionization (a) Sketch the energy-band diagram for zero bias for the case when no space charge (depletion) region exist at the junction and indicate the barrier height seen by electrons in the metal. (b) Determine Na so that the condition in part (a) is satisfied