A silicon PIN junction has the doping profile shown in Figure P7.34. The I corresponds to...

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A silicon PIN junction has the doping profile shown in Figure P7.34. The "I" corresponds to an ideal intrinsic region in which there is no impurity doping concentration. A reverse-biased voltage is applied to the PIN junction so that the total depletion width extends from -2 um to +2 um. (a) Using Poisson's equation, calculate the magnitude of the electric field at x = 0. (b) Sketch the electric field through the PIN junction. (c) Calculate the reverse-biased voltage that must be applied. (N-N₂) (cm) -5 x 10¹5 5 × 10 +1 i region- +2 x(jam) Figure P7.341 Figure for Problem 7.34. A silicon PIN junction has the doping profile shown in Figure P7.34. The "I" corresponds to an ideal intrinsic region in which there is no impurity doping concentration. A reverse-biased voltage is applied to the PIN junction so that the total depletion width extends from -2 um to +2 um. (a) Using Poisson's equation, calculate the magnitude of the electric field at x = 0. (b) Sketch the electric field through the PIN junction. (c) Calculate the reverse-biased voltage that must be applied. (N-N₂) (cm) -5 x 10¹5 5 × 10 +1 i region- +2 x(jam) Figure P7.341 Figure for Problem 7.34.