An ICP plasma used for etching silicon has the following characteristics: Ionization fraction q = 5...

 

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An ICP plasma used for etching silicon has the following characteristics: Ionization fraction q = 5 %, Neutral gas density Ng = 5 x 10 m- Neutral gas temperature Tg = 400 K Electron temperature Te = 3 eV Calculate: the electron density i) ii) the gas pressure iii) the characteristic width of the sheath between the plasma and silicon wafer An ICP plasma used for etching silicon has the following characteristics: Ionization fraction q = 5 %, Neutral gas density Ng = 5 x 10 m- Neutral gas temperature Tg = 400 K Electron temperature Te = 3 eV Calculate: the electron density i) ii) the gas pressure iii) the characteristic width of the sheath between the plasma and silicon wafer

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