An n$+$ poly$-$Si gate CMOS process uses an n$-$type substrate with a doping of $1016/$cm$3.$ An implant$/$drive in schedule will be used to form a p$-$well with a net surface concentration of $1017/$cm$3$ and a junction depth of $3$ m$.$ Assume that a final surface concentration of $1\mathrm{.}1$x$1017/$cm$3$ is required to produce a net concentration of $1$x$1017/$cm$3$ at the surface from the Irvin$$s curve. $($for B$,$ Do$=10\mathrm{.}5$ cm$2/$sec and Ea$=3\mathrm{.}69$eV$)($a$)$ What is the drive$-$in time at $1150$C$?($b$)$ Determine the implanted dose in silicon. $($c$)$ Calculate the threshold voltage of the n$-$ and p$-$channel transistors if the oxide thickness is $5$ nm$?$