Question: Consider a certain silicon wafer with a uniform phosphorous concentration of 1017 atoms/cm-3 exposed to boron diffusion process at a temperature of 1100 for 2

Consider a certain silicon wafer with a uniform phosphorous concentration of 1017 atoms/cm-3 exposed to boron diffusion process at a temperature of 1100 for 2 hours. If the concentration of boron at the surface is held constant at 310 20 atoms/cm-3 during the diffusion, calculate the resultant junction depth. (Hint: the frequency factor D0=10.5 and the activation energy is 3.69 eV)

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