Consider a CMOS process for which Lmin $=0\mathrm{.}25$ m$,$

tox $=6$ nm$,$ n $=460$ cm $2/$V $$ s$,$ and Vt $=0\mathrm{.}5$ V$.$

$($a$)$ Find C ox and k$$

n$.$

$($b$)$ For an NMOS transistor with W$/$L $=20$ m$/0\mathrm{.}25$ m$,$

calculate the values of VOV $,$ VGS $,$ and VDS min needed to

operate the transistor in the saturation region with a dc

current I D $=0\mathrm{.}5$ mA$.$

$($c$)$ For the device in $($b$),$ find the values of VOV and VGS

required to cause the device to operate as a $100-$ resistor

for very small vDS $.$