help with 1 ,2, and 3 .. i used the table for help when i tried solving it

1. What is the oxide thickness if dry oxidation is performed on bare silicon at 1000C for 1 hour in dry oxygen? What is the oxide thickness if the silicon in Problem #1 is re-oxidized at 1200C for 1 hour in dry oxygen? If the re-oxidation in Problem \#2 had been in steam (not dry oxygen), what would have been the final oxide thickness? (Same temperature \& time: 1200C and 1 hr). How much silicon () was consumed during oxidation? The parameter is used to compensate for the rapid growth regime for thin oxides. (Afier Deal and Grove.)