At OK, A pure semiconductor O points behaves like an insulator because- Free electrons are not...

 

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At OK, A pure semiconductor O points behaves like an insulator because- Free electrons are not available for current conduction Drift velocity of free electrons is very small There is no recombination of electrons with holes Energy possessed by electrons at that low temperature is almost zero 3 points Calculate the concentration of the electrons and the holes (in electrons/m) for intrinsic silicon at (350°k). The energy gap equals 1.1 eV, and (N.=2 x10 25 /m?, N, = N/2). Also, find the value of Fermi energy level. 1.73e17, 0.6eV 1.73e17, 0.55eV 2e17, 0.55eV 2e17, 0.6eV At OK, A pure semiconductor O points behaves like an insulator because- Free electrons are not available for current conduction Drift velocity of free electrons is very small There is no recombination of electrons with holes Energy possessed by electrons at that low temperature is almost zero 3 points Calculate the concentration of the electrons and the holes (in electrons/m) for intrinsic silicon at (350°k). The energy gap equals 1.1 eV, and (N.=2 x10 25 /m?, N, = N/2). Also, find the value of Fermi energy level. 1.73e17, 0.6eV 1.73e17, 0.55eV 2e17, 0.55eV 2e17, 0.6eV