let me know TCAD silvaco "code"

Goal: Implementation of a CMOS Inverter consisting of N$/$PMOSFET with $45$nm gate lengthAchievement conditions:

One of N$/$PMOSFET operates in depletion mode, and the other operates in enhancement mode

Additionally, the inverter operation must function between $1$~$2$V

Starting condition: Begin with $10$p$-$type Si

please let me know Tcad silvaco "code"

$========================================================$

example$)180$nm NMOSFET TCAD code

GO ATHENA

### $180$nm NMOSFET simulation with Cobalt salicide Module.

## Process simulation

## Defining mesh.

line x loc$=0$ spac$=0\mathrm{.}1$

line x loc$=0\mathrm{.}3$ spac$=0\mathrm{.}01$

line x loc$=0\mathrm{.}5$ spac$=0\mathrm{.}005$

line x loc$=0\mathrm{.}59$ spac$=0\mathrm{.}005$

line y loc$=-1\mathrm{.}6$ spac$=0\mathrm{.}1$

line y loc$=-1\mathrm{.}4$ spac$=0\mathrm{.}005$

line y loc$=-1$ spac$=0\mathrm{.}1$

## silicon Wafer

init silicon boron resistivity$=10$ orientation$=100$

## p$-$WELL Vth implant

implant Boron dose$=8$e$13$ energy$=350$ tilt$=7$

implant Boron dose$=4$e$13$ energy$=150$ tilt$=7$

implant Boron dose$=4$e$14$ energy$=80$ tilt$=7$

implant Boron dose$=1$e$14$ energy$=20$ tilt$=7$

## p$-$WELL drive$-$in

method fermi compress

diffuse time$=60$ temp$=800$ nitro press$=1\mathrm{.}0$

## GateOx

deposit oxynitride thick$=0\mathrm{.}0036$

## Gatepoly

deposit polysilicon thick$=0\mathrm{.}250$

## Gatepoly etch

etch polysilicon left p$1.$x$=0\mathrm{.}5$

## LDD S$/$D Implant

implant arsenic dose$=9\mathrm{.}0$e$14$ energy$=15$ tilt$=7$

## Halo Implant

implant Boron dose$=9$e$12$ energy$=25$ tilt$=30$

## Spacer deposition

deposit nitride thick$=0\mathrm{.}1$

## Spacer etch

etch nitride dry thick$=0\mathrm{.}1$

## Gate Oxide etch

etch oxynitride dry thick$=0\mathrm{.}0036$

## Buffer oxide deposition

deposit oxide thick$=0\mathrm{.}010$

## S$/$D Implant

implant arsenic dose$=5\mathrm{.}0$e$15$ energy$=50$ tilt$=7$

implant phosphor dose$=3\mathrm{.}0$e$15$ energy$=30$ tilt$=7$

## S$/$D anneal

method fermi compress

diffuse time$=0\mathrm{.}17$ temp$=1000$ nitro press$=1\mathrm{.}0$

## Buffer oxide etch

etch oxide all

## Cosi formation

deposit cobalt thick$=0\mathrm{.}02$

deposit barrier thick$=0\mathrm{.}025$

diffuse time$=1$ temp$=500$ nitro press$=1\mathrm{.}0$

etch barrier all

etch cobalt all

diffuse time$=0\mathrm{.}5$ temp$=800$ nitro press$=1\mathrm{.}0$

## S$/$D contact metal formation

deposit titanium thick$=0\mathrm{.}05$

deposit tungsten thick$=0\mathrm{.}1$

etch tungsten right p$1.$x$=0\mathrm{.}2$

etch titanium right p$1.$x$=0\mathrm{.}2$

structure mirror right

electrode name$=$gate x$=0\mathrm{.}58$ y$=-1\mathrm{.}8$

electrode name$=$source x$=0\mathrm{.}2$ y$=-1\mathrm{.}6$

electrode name$=$drain x$=1\mathrm{.}0$ y$=-1\mathrm{.}6$

structure outf$=$MOSFETcompare.str

tonyplot MOSFETcompare.str

GO ATLAS

mesh infile$=$MOSFETcompare.str

## gate WF$,$ Qss

contact name$=$gate n$.$poly

interface qf$=3$e$10$

## Use the cvt mobility model for MOS

models cvt srh print numcarr$=2$

solve init

### for Ids$-$Vgs curve with Vds $=1\mathrm{.}0$V

solve vdrain$=1\mathrm{.}0$ outf$=$solve$\_1000$mV

### Plotting Ids$-$Vgs curve with Vds $=1\mathrm{.}0$V

load infile$=$solve$\_1000$mV

log outf$=$IdVg$\_1000$mV$.$log

solve name$=$gate vgate$=0$ vfinal$=1\mathrm{.}0$ vstep$=0\mathrm{.}1$

### for Ids$-$Vds curve with Vgs $=1\mathrm{.}0$V

solve vgate$=1\mathrm{.}0$ outf$=$solve$\_1000$mV

### Plotting Ids$-$Vds curve with Vgs $=1\mathrm{.}0$V

load infile$=$solve$\_1000$mV

log outf$=$IdVd$\_1000$mV$.$log

solve name$=$drain vdrain$=0\mathrm{.}8$ vfinal$=2\mathrm{.}8$ vstep$=0\mathrm{.}1$

## units : Vt $[$V$]$ SS $[$mV$/$dec$]$

extract name$="$SS$\_0\mathrm{.}1$V$"1$E$3*1\mathrm{.}0/$slope$($maxslope$($curve$($abs$($v$.$"gate"$),$log$10($abs$($i$.$"drain"$)))))$

tonyplot IdVg$\_1000$mV$.$log

tonyplot IdVd$\_1000$mV$.$log

quit