Question: Perform the subthreshold leakage current for a NAND gate built from unit transistors with both inputs A = B = 0 . Show that the

Perform the subthreshold leakage current for a NAND gate built from unit transistors with both inputs A = B =0. Show that the subthreshold leakage current through the series transistors is half that of the inverter if n =1.0, Let n =2p =1 mA/V2, n =1.0, and |Vt|=0.4 V.

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