We consider the following circuit based on the use of a field effect transistor which can...

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We consider the following circuit based on the use of a field effect transistor which can be modelized as followed: (Electrical intrinsic small signal model for f≤14GHz): RG-202 CG=0.1pF Sm g=10 gd-0.00502-1 CDs=0.8pF We would like to match this FET at the frequency equal to 2GHz: At the input, to a generator which internal impedance is equal to Ro-509, At the output to a real impedance Ro-509. Problem 2: Input Matching : 1) Determine the expression of |H|² - Ve E versus co by applying Thevenin's theorem to the input generator and the lumped element allowing the matching of the real part of the input impedance of the transistor. 1 Give the expression of H² versus oo and co. 2) Assuming that w = Lga CG 3) Noting that for a given o (from the input generator) |H|² is a function of ne and 20 @o, what are the values of ne and wo to maximize |H|². 4) What is then the value of the power insertion gain G₁? 5) What is the frequency for which the power insertion gain previously calculated is equal to 1? 6) Realize the schematic of the transistor with the output matching network only and try to find the previous theoretical results. We consider the following circuit based on the use of a field effect transistor which can be modelized as followed: (Electrical intrinsic small signal model for f≤14GHz): RG-202 CG=0.1pF Sm g=10 gd-0.00502-1 CDs=0.8pF We would like to match this FET at the frequency equal to 2GHz: At the input, to a generator which internal impedance is equal to Ro-509, At the output to a real impedance Ro-509. Problem 2: Input Matching : 1) Determine the expression of |H|² - Ve E versus co by applying Thevenin's theorem to the input generator and the lumped element allowing the matching of the real part of the input impedance of the transistor. 1 Give the expression of H² versus oo and co. 2) Assuming that w = Lga CG 3) Noting that for a given o (from the input generator) |H|² is a function of ne and 20 @o, what are the values of ne and wo to maximize |H|². 4) What is then the value of the power insertion gain G₁? 5) What is the frequency for which the power insertion gain previously calculated is equal to 1? 6) Realize the schematic of the transistor with the output matching network only and try to find the previous theoretical results.

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