Question: Repeat Problem 16.44 if the circuit and transistor parameters are (V_{D D}=2.5 mathrm{~V}), (V_{T N}=0.35 mathrm{~V}, V_{T P}=-0.35 mathrm{~V}, K_{n}=100 mu mathrm{A} / mathrm{V}^{2}), and

Repeat Problem 16.44 if the circuit and transistor parameters are \(V_{D D}=2.5 \mathrm{~V}\), \(V_{T N}=0.35 \mathrm{~V}, V_{T P}=-0.35 \mathrm{~V}, K_{n}=100 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(K_{p}=50 \mu \mathrm{A} / \mathrm{V}^{2}\).

Data From Problem 16.44:-

The CMOS inverter in Figure 16.21 is biased at \(V_{D D}=3.3 \mathrm{~V}\). Let \(K_{n}=K_{p}\), \(V_{T N}=0.5 \mathrm{~V}\), and \(V_{T P}=-0.5 \mathrm{~V}\).

(a) Determine the two values of \(v_{I}\) and the corresponding values of \(v_{O}\) for which \(\left(d v_{O} / d v_{I}\right)=-1\) on the voltage transfer characteristics.

(b) Find the noise margins.

USGP + VDD iDP + PMOS: USDP Kp,VTP + iDN NMOS: UDSN

USGP + VDD iDP + PMOS: USDP Kp,VTP + iDN NMOS: UDSN + KN, VTN VGSN Figure 16.21 CMOS inverter

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