Transistors are made by doping single crystal silicon with different types of impurities to generate n- and p-type regions. Phosphorus and boron are typical n- and p-type dopant species, respectively. Assuming that a thermal treatment at 1100°C for 1 h is used to cause diffusion of the dopants, calculate the constant surface concentration of P and B needed to achieve a concentration of 10¹⁸ atoms/cm3 at a depth of 0.1 mm from the surface for both n- and p-type regions. The diffusion coefficients of P and B in single crystal silicon at 1100°C are 6.5 x 10^-13 cm²/s and 6.1 x 10^-13 cm²/s, respectively.