Consider doping of silicon with gallium. Assume that the diffusion coefficient of gallium in Si at 1100C
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Consider doping of silicon with gallium. Assume that the diffusion coefficient of gallium in Si at 1100°C is 7 x 10-13 cm2/s. Calculate the concentration of Ga at a depth of 2.0 micrometer if the surface concentration of Ga is 1023 atoms/cm3. The diffusion times are 1, 2, and 3 hours.
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Related Book For 
The Science And Engineering Of Materials
ISBN: 9781305076761
7th Edition
Authors: Donald R. Askeland, Wendelin J. Wright
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