Using octave and excel, solve the given problem.

In semiconductor physics, the resistivity p of doped silicon is based on the charge q on the electron, the electron density n, and the electron mobility fu. The electron density is given in terms of the doping density N and the intrinsic carrier density ni. The electron mobility is described by the temperature T, the reference temperature To, and the reference mobility Ho. The equations required to compute the resistivity are 1 p= onu where d n = = {{N N + N2 + 4n? and -2.42 u = Ho Determine N given the following: To = 300 K, T = 1000 K, Mo = 1300 cm/V.s, q = 1.6 10-19 C, n; = 6.21 x 100 cm-3 and the desired resistivity p = 6 x 106 V.s.cm/C