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In semiconductor physics, the resistivity p of doped silicon is based on the charge q on the electron, the electron density n, and the electron mobility u. The electron density is given in terms of the doping density N and the intrinsic carrier density n. The electron mobility is described by the temperature 7, the reference temperature to, and the reference mobility Mo. The equations required to compute the resistivity are 1 qnu where n = N + N2 + 4n? and T -2.42 Determine N given the following: To = 300 K, T = 1000 K. Ho = 1300 cm?/V.s, q = 1.6 x 10-19, ni = 6.21 x 109 cm3 and the desired resistivity p = 6 x 106V.5. cm/C