Question: When a MOS transistor is biased with VDS > VDS , Sat, the effective length of the channel reduces by L and the current ID

When a MOS transistor is biased with VDS>VDS,Sat, the effective length of the channel reduces by L and the current ID is larger than ID,Sat. Assuming that the depleted region L is described by as the expression of depletion region in any pn junction with VD- VD,Sat voltage across L, find the expression of conductance (gD =ID/VD) beyond saturation.

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