A lateral pnp transistor has an effective base width of 10 m (1 m = 10
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A lateral pnp transistor has an effective base width of 10 µm (1 µm = 10−4 cm).
(a) If the emitter-base depletion capacitance is 2 pF in the forward-bias region and is constant, calculate the device fT at IC = −0.5 mA. (Neglect Cμ.) Also, calculate the minority-carrier harge stored in the base of the transistor at this current level. Data: DP = 13 cm2/s in silicon.
(b) If the collector-base depletion layer width changes 0.11 µm per volt of VCE, calculate ro for this transistor at IC = −0.5 mA.
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Related Book For
Analysis and Design of Analog Integrated Circuits
ISBN: 978-0470245996
5th edition
Authors: Paul R. Gray, Paul J. Hurst Stephen H. Lewis, Robert G. Meyer
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