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engineering
electronic devices and circuit theory
Electronic Devices And Circuit Theory 11th Edition Robert Boylestad, Louis Nashelsky - Solutions
Referring to Fig. 16.35, which terminals must be energized to display number 7?Fig. 16.35 12 3 4 5 6 7 8 FIG. 16.35
In your own words, describe the basic operation of an LCD.
Discuss the relative differences in mode of operation between an LED and an LCD display.
In Fig. 16.43 , V = 0.2 V and Rvariable = 10 Ω . If the current through the sensitive movement is 2 mA and the voltage drop across the movement is 0V, what is the resistance of the thermistor? IT Sensitive movement - temperature calibrated FIG. 16.43
Why do you believe the maximum reverse current rating for the tunnel diode can be greater than the forward current rating?
For the common-base network of Fig. 5.187 :a. Determine Zi and Zo .b. Calculate A v and A i .c. Determine a, b, re, and ro .Fig. 5.187 hp =-0.992 h = 9.45 Q hob = 1 µA/V 10 μF 10 µF 1.2 k2 2.7 k2 4 V 12 V FIG. 5.187 우+
For the network of Fig. 5.188, determine:a. Zi.b. Av.c. Ai = Io>Ii.d. ZoFig. 5.188 20 V 2.2 k2 470 k2 1 k2 5 µF he = 140 hie = 0.86 k2 h= 1.5 x 10 ho = 25 µs 5 μF + !3! 2. %3D V 1.2 k2 10 μF FIG. 5.188
For the common-base amplifier of Fig. 5.189, determine:a. Z i.b. A i. c. A v.d. Z o.Fig. 5.189 h =9.45 2 he =-0.997 hab= 0.5 µA/V h = 1x 10-4 !! 0.6 k2 5 uF 5 μ' 1.2 k2 2.2 k2 4 V 14 V FIG. 5.189
a. Using the characteristics of Fig. 3.7 and 3.8, determine I C if VCB = 5 V and V BE = 0.7 V.b. Determine V BE if IC = 5 mA and V CB = 15 V.c. Repeat part (b) using the characteristics of Fig. 3.10b.d. Repeat part (b) using the characteristics of Fig. 3.10c.e. Compare the solutions for V BE
a. Using the characteristics of Fig. 3.8, determine the resulting collector current if IE= 3.5 mA and VCB =10 V.b. Repeat part (a) for IE = 3.5 mA and VCB = 20 V.c. How have the changes in VCB affected the resulting level of IC ?d. On an approximate basis, how are IE and IC related based on
Using the characteristics of Fig. 3.7, determine VBE at IE = 5 mA for VCB =1, 10, and 20 V. Is it reasonable to assume on an approximate basis that V = CB has only a slight effect on the relationship between VBE and IE ?Fig. 3.7 IE (mA) VCB = 20 V Vca = 10
From memory, sketch the transistor symbol for a pnp and an npn transistor, and then insert the conventional flow direction for each current.
If the emitter current of a transistor is 8 mA and IB is 1/100 of IC, determine the levels of IC and IB.
Which of the transistor currents is always the largest? Which is always the smallest? Which two currents are relatively close in magnitude the emitter current of a transistor is 8 mA and IB is /100 of IC, determine the levels of IC and IB .
Sketch a figure similar to Fig. 3.5 for the majority- and minority-carrier flow of an NPN transistor.Describe the resulting carrier motion.Fig. 3.5 Majority carriers P + Minority carriers E B. Depletion regions Vcc EE FIG. 3.5 Majority and minority carrier flow of a pnp transistor.
Sketch a figure similar to Fig. 3.4b for the reverse-biased junction of an npn transistor. Describe the resulting carrier motion.Fig. 3.4 Minority carriers B+ Depletion region Vcc (b)
Sketch a figure similar to Fig. 3.4a for the forward-biased junction of an npn transistor.Describe the resulting carrier motion.Fig. 3.4a + Majority carriers E + B Depletion region VEE (a)
What is the source of the leakage current in a transistor?
Perform an analysis of the network of Fig. 2.162 using PSpice Windows. Perform a general analysis of the Zener network of Fig. 2.188 using PSpice Windows.Fig. 2.162Fig. 2.188 I ka 0.47 ka 20 V Si Si
Perform an analysis of the network of Fig. 2.156b using PSpice WindowsFig. 2.156b Ip - 5 V 本 Si + 8 V 1.2 k2 2.2 k2 4.7 k2 Si 6 -6 V (a) (b)
Determine the required PIV ratings of the diodes of Fig. 2.123 in terms of the peak secondary voltage Vm.Fig. 2.123 V D2 2V CC 2V m. +
For the network of Fig. 2.188, determine the range of Vi that will maintain VL at 8 V and not exceed the maximum power rating of the Zener diode.Fig. 2.188 Rs R5 V o 16 Vo 91Ω Vz = 8 V = 400 mW PZmas Vz RL 0.22 k2 RL FIG. 2.188 FIG. 2.187
Sketch vo for each network of Fig. 2.182 for the input shown.Fig. 2.182 C Ideal Ideal + R E 20 V (b)
Sketch vo for each network of Fig. 2.181 for the input shown.For the network of Fig. 2.183:a. Calculate 5t.b. Compare 5t to half the period of the applied signal.c. Sketch vo.Fig. 2.181FIG. 2.183 20 V Ideal Ideal R 5 V -20 V (a) (b)
For the network of Fig. 2.171, sketch vo and iR.Fig. 2.171 iR 10 V 1 ΚΩ t Vị Si 1 ΚΩ -10 V
Repeat Problem 22 with a silicon diode (VK = 0.7 V).Problem 22Determine the regulated voltage and circuit currents for the shunt regulator of Fig. 15.45.Fig. 15.45 Vo V, (+15 V) 33 2 10 V RL 100 2
Assuming an ideal diode, sketch vi, vd, and id for the half-wave rectifier of Fig. 2.168. The input is a sinusoidal waveform with a frequency of 60 Hz. Determine the profit value of vi from the given dc level.Fig. 2.168 is Ideal oVac = 2 V de Va 2 ΚΩ FIG. 2.168
Determine Vo for the network of Fig. 2.39 with 10 V on both inputs.Fig. 2.39 Si (1) E= 10 Vo D1 Si (0) 0 Vo D2 R 1 k2 FIG. 2.39 Positive logic OR gate.
Determine Vo for the network of Fig. 2.39 with 0 V on both inputs.Fig. 2.39 Si (1) E= 10 Vo 1 DI Si (0) 0 Vo D2 R1 kQ FIG. 2.39 Positive logic OR gate.
a. Using the characteristics of Fig. 2.152b , determine ID, VD, and VR for the circuit of Fig. 2.152a.b. Repeat part (a) using the approximate model for the diode, and compare results.c. Repeat part (a) using the ideal model for the diode, and compare results.Fig. 2.152a. + Vp Si R20.75 kn VR E 12
Describe the difference between donor and acceptor impurities.
a. How much energy in joules is required to move a charge of 12 mC through a difference in potential of 6 V?b. For part (a), find the energy in electron volts.
Consult your reference library and determine the level of Eg for GaP, ZnS, and GaAsP, three semiconductor materials of practical value. In addition, determine the written name for each material.
Sketch the atomic structure of silicon and insert an impurity of arsenic as demonstrated for silicon in Fig. 1.7Fig. 1.7 Si Si Si Fifth yalence electron of antimony Sb Si Antimony (Sb) impurity Si Si Si FIG. 1.7 Antimony impurity in n-type material.
Repeat Problem 10, but insert an impurity of indium.Problem 10Sketch the atomic structure of silicon and insert an impurity of arsenic as demonstrated for silicon in Fig. 1.7Fig. 1.7 Si Si Si Fifth yalence electron of antimony Sb Si Antimony (Sb) impurity Si Si Si FIG. 1.7 Antimony impurity in
Consult your reference library and find another explanation of hole versus electron flow. Using both descriptions describe in your own words the process of hole conduction.
Describe in your own words the conditions established by forward- and reverse-bias conditions on a p–n junction diode and how the resulting current is affected.
Describe how you will remember the forward- and reverse-bias states of the p – n junction diode. That is, how will you remember which potential (positive or negative) is applied to which terminal?
a. Determine the thermal voltage for a diode at a temperature of 20°C.b. For the same diode of part (a), find the diode current using Eq. 1.2 if Is = 40 nA, n = 2 (low value of VD), and the applied bias voltage is 0.5 V.Eq. 1.2 Ip = 1,(eVp/nVr – 1) 1)
Given a diode current of 8 mA and n = 1, find Is if the applied voltage is 0.5 ∨ and the temperature is room temperature (25°C).
Given a diode current of 6 mA, νT = 26 mV, n = 1 and Is =1 nA, find the applied voltage V D.
a. Plot the function y = ex for x from 0 to 10. Why is it difficult to plot?b. What is the value of y = ex at x = 0?c. Based on the results of part (b), why is factor =1 important in Eq. (1.2)?Eq. (1.2) Ip = 1,(eVp/nVr – 1) 1)
Determine the average ac resistance for the diode of Fig. 1.15 for the region between 0.6 V and 0.9 V.Fig. 1.15 a(mA) 20 19 Actual commercially available unit 18t 16t Eq (1.1) 13- 12- Defined polanity and direction for graph 11t 10- Forward-bias region (V, >0 V, Ip>0 mA)- 403020-10 03 t-10 pA 05
Find the piecewise-linear equivalent circuit for the germanium and gallium arsenide diodes of Fig. 1.18.Fig. 1.18 Ip (mA 30- 25 204 Ge Si GaAs 15. 10 Vav (GaAs)- 100 V 50 V 03 Vx (Ge) EVg (Si) 5 pA 10 12 Vg (GaAs) (GaAs) 0.7 Vo (V) Vay (Si 10 pA Vav (Ge) LA 1(Ge) FIG. 1.18 Comparison of Ge,
a. Referring to Fig. 1.33, determine the transition capacitance at reverse-bias potentials of 25 V and 10 V. What is the ratio of the change in capacitance to the change in voltage?b. Repeat part (a) for reverse-bias potentials of 10 V and 1 V. Determine the ratio of the change in capacitance to
The no-bias transition capacitance of a silicon diode is 8 pF with V K 0.7 V and n 1>2. What is the transition capacitance if the applied reverse bias potential is 5 V?
a. Comment on the change in capacitance level with an increase in the reverse-bias potential for the diode of Fig. 1.37.b. What is the level of C (0)?c. Using VK 0.7 V, find the level of n in Eq. 1.9.Fig. 1.37 .Eq. 1.9. FORWARD VOLTAGE VERSUS REVERSE VOLTAGE VERSUS POWER DERATING CURVE FORWARD
Find the applied reverse bias potential if the transition capacitance of a silicon diode is 4 pF but the no-bias level is 10 pF with n 1>3 and V K = 0.7 V.
Referring to Fig. 1.52e, what would appear to be an appropriate value of V K for this device?How does it compare to the value of VK for silicon and germanium?Fig. 1.52 Emitted visible light Vo (b) (+)0 Metal Metal contact contact (a) FIG. 1.50 (a) Process of electroluminescence in the LED; (b)
a. Using the characteristics of Fig. 2.152b, determine ID and VD for the circuit of Fig. 2.153.b. Repeat part (a) with R = 0.47 k.c. Repeat part (a) with R = 0.68 k.d. Is the level of VD relatively close to 0.7 V in each case?How do the resulting levels of ID compare? Comment accordingly.Fig. 2.153
Determine the value of R for the circuit of Fig. 2.153 that will result in a diode current of 10 mA if E = 7 V. Use the characteristics of Fig. 2.152b for the diode.Fig. 2.152 n (mA) 30- 25 20 15 10- 0 9. F0.7 V 10 12 Vp (V) (b) FIG. 2.152 Problems I and 2.
a. Using the approximate characteristics for the Si diode, determine VD, ID, and VR for the circuit of Fig. 2.154.b. Perform the same analysis as part (a) using the ideal model for the diode.c. Do the results obtained in parts (a) and (b) suggest that the ideal model can provide a good
Determine Vo and ID for the network of Fig. 2.163. 1 k2 0.47 k2 2 k2 Si 20 V Si Si +10 Vo- GaAs 2 k2 2 k2 FIG. 2.162 FIG. 2.163 Problem 12. Problems 13 and 51.
Given that Eg = 0.67 eV for germanium, find the wavelength of peak solar response for the material. Do the photons at this wavelength have a lower or higher energy level?
Using the information provided in Fig. 1.52 , determine the forward voltage across the diode if the relative luminous intensity is l.5.Fig. 1.52 Green T= 25°C 20 Yellow GAASP Red 1- 25°C High efficiency Red 15 0.5 10 300 S50 600 650 700 750 Wavelength-nm (d) 05 10 1.5 2.0 2.5 3.0 Vr - Forward
Sketch the output of the network of Fig. 2.145 if the input is a 50-V square wave. Repeat for a 5-V square wave.Fig. 2.145 50 V + 5 k2 10 V Vị 10-V Vo 2n of Zeners -10 V FIG. 2.145 Simple square-wave generator.
Perform an analysis of the network of Fig. 2.161b using PSpice Windows.Fig. 2.161 +16 V Si Si Si 4.7 k2 6 4 V (b)
Repeat Problem 49 using Multisim.Problem 49 Perform an analysis of the network of Fig. 2.156b using PSpice WindowsFig. 2.156 Ip -5V + 8 V Vo Si 1.2 k2 2.2 k2 4.7 k2 Ip Si 6 -6 V (a) (b)
For the network of Fig. 2.183:a. Calculate 5t.b. Compare 5t to half the period of the applied signal.c. Sketch νo. Vi 12 V + 0.1 µF Si R 56 ka |-12 V f= 1 kHz FIG. 2.183 Problem 39.
Repeat Problem 50 using Multisim.Perform an analysis of the network of Fig. 2.161b using PSpice Windows.Fig. 2.161 +16 V Si Si Si 4.7 k2 6 4 V (b)
What names are applied to the two types of BJT transistors? Sketch the basic construction of each and label the various minority and majority carriers in each. Draw the graphic symbol next to each. Is any of this information altered by changing from silicon to a germanium base?
What is the major difference between a bipolar and a unipolar device?
How must the two-transistor junctions be biased for proper transistor amplifier operation?
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