A diffused silicon p-n junction has a linearly graded junction on the p-side with a = 2 x 10¹⁹ cm^-4, and a uniform doping of 5 x 10¹⁴ cm^-3 on the n-side. If the depletion layer width of the p-side is 0.7 μm at zero bias, find the total depletion layer width, built-in potential, and maximum field at zero bias.

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