Question: Example 4.2 Sketch a 3-input NAND gate with transistor widths chosen to achieve effective rise and fall resistance equal to that of a unit inverter

Example 4.2 Sketch a 3-input NAND gate with transistor widths chosen to achieve effective rise and fall resistance equal to that of a unit inverter (R). Annotate the gate with its gate and diffusion capacitances. Assume all diffusion nodes are contacted. Then sketch equivalent circuits for the falling output transi- tion and for the worst-case rising output transition

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