Q3: A current-fed Full-Bridge bidirectional converter is designed for the same specifications as given in Q1 except duty cycle Dis varied with D = 0.8 for Vin = 22 V and rated power operation. Calculate the following: (a) the secondary-to-primary transformer turns ratio (b) the value of transformer leakage inductance (c) the maximum voltage rating of the primary side and secondary side switches (d) the values of input inductor if the inductor current ripple is 10 % of its average current. Q1: A bidirectional voltage-fed Dual Active Bridge (DAB) converter is designed for the following specifications: input voltage Vin = 22 to 41 V (variable de), output voltage V. = 380 V, rated power P. = 1 kW. The switching frequency of the semiconductor devices is 100 kHz. Duty cycle of all the semiconductor devices is nearly 50% with dead-gap to avoid short circuit across the source. Q3: A current-fed Full-Bridge bidirectional converter is designed for the same specifications as given in Q1 except duty cycle Dis varied with D = 0.8 for Vin = 22 V and rated power operation. Calculate the following: (a) the secondary-to-primary transformer turns ratio (b) the value of transformer leakage inductance (c) the maximum voltage rating of the primary side and secondary side switches (d) the values of input inductor if the inductor current ripple is 10 % of its average current. Q1: A bidirectional voltage-fed Dual Active Bridge (DAB) converter is designed for the following specifications: input voltage Vin = 22 to 41 V (variable de), output voltage V. = 380 V, rated power P. = 1 kW. The switching frequency of the semiconductor devices is 100 kHz. Duty cycle of all the semiconductor devices is nearly 50% with dead-gap to avoid short circuit across the source