An abrupt silicon p-n junction has NA = 1x109 cm and ND = 5 x...

  

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An abrupt silicon p-n junction has NA = 1x10¹9 cm ³ and ND = 5 x 10¹5 cm-³. Calculate injected hole concentration at a forward bias voltage of 0.25V at the edge of the depletion region on the n-side. Assume T=300K. What is the forward current density if μp = 500 cm²/V.s, Lp-1.14x 10³ cm and Tp = 10-7s. The recombination lifetime T₁ = 10-7 s. Calculate diffusion current and recombination current components. Comment on what mechanism dominates forward current characteristic. An abrupt silicon p-n junction has NA = 1x10¹9 cm ³ and ND = 5 x 10¹5 cm-³. Calculate injected hole concentration at a forward bias voltage of 0.25V at the edge of the depletion region on the n-side. Assume T=300K. What is the forward current density if μp = 500 cm²/V.s, Lp-1.14x 10³ cm and Tp = 10-7s. The recombination lifetime T₁ = 10-7 s. Calculate diffusion current and recombination current components. Comment on what mechanism dominates forward current characteristic.