An n channel MOS device in a technology for which oxide thickness is 20 nm, minimum gate length is 1 m, k 100 A V, and V, 0 8 V operates in the triode region, with small ups and with the gate source voltage in the range 0 V to 5 V What device width is needed to ensure that the minimum available re...

An n-channel MOS device in a technology for which oxide thickness is 20 nm, minimum gate...

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Analysis and Design of Analog Integrated Circuits

ISBN: 978-0470245996

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Authors: Paul R. Gray, ? Paul J. Hurst Stephen H. Lewis, ? Robert G. Meyer

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