Question: An n-channel MOS device in a technology for which oxide thickness is 20 nm, minimum gate length is 1 m, k = 100 A/V,

An n-channel MOS device in a technology for which oxide thickness is

An n-channel MOS device in a technology for which oxide thickness is 20 nm, minimum gate length is 1 m, k = 100 A/V, and V, = 0.8 V operates in the triode region, with small ups and with the gate-source voltage in the range 0 V to +5 V. What device width is needed to ensure that the minimum available resistance is 1 k? Wmax

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