Calculate the zero-bias junction capacitance for the example in Problem 1.1, and also calculate the value at 5 V reverse bias and 0.3 V forward bias. Assume a junction area of 2 × 10⁻⁵ cm².

Data from Prob. 1.1

Calculate the built-in potential, depletion-layer depths, and maximum field in a plane-abrupt pn junction in silicon with doping densities N_A = 8 × 10¹⁵ atoms/cm³ and N_D = 10¹⁷ atoms/cm³. Assume a reverse bias of 5 V.