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engineering
electrical engineering
Electronic Devices and Circuit Theory 10th edition Robert L. Boylestad, Louis Nashelsky - Solutions
Calculate the output voltage and Zener diode current in the regulator circuit of Fig. 15.42.
What regulated output voltage results in the circuit of Fig. 15.43?
Draw the circuit of a voltage supply comprised of a full-wave bridge rectifier, capacitor filter, and IC regulator to provide an output of +12 V.
Calculate the minimum input voltage of the full-wave rectifier and filter capacitor network in Fig. 15.46 when connected to a load drawing 250 mA.
Determine the maximum value of load current at which regulation is maintained for the circuit of Fig. 15.47.
Determine the regulated voltage in the circuit of Fig. 15.30 with R1 = 240 ( and R2 = 1.8 k(.
Determine the regulated output voltage from the circuit of Fig. 15.48.
A half-wave rectifier develops 20 V dc. What is the value of the ripple voltage?
What is the rms ripple voltage of a full-wave rectifier with output voltage 8 V dc?
A full-wave rectified signal of 18 V peak is fed into a capacitor filter. What is the voltage regulation of the filter if the output is 17 V dc at full load?
A full-wave rectified voltage of 18 V peak is connected to a 400-(F filter capacitor. What are the ripple and dc voltages across the capacitor at a load of 100 mA?
A full-wave rectifier (operating from a 60-Hz supply) drives a capacitor-filter circuit (C = 100(F), which develops 12 V dc when connected to a 2.5-k( load. Calculate the output voltage ripple.
Describe in your own words how the construction of the hot-carrier diode is significantly different from the conventional semiconductor diode
At a reverse-bias potential of 4 V, determine the total capacitance for the varactor from Fig. 16.10(a) and calculate the value from = 1/(2((RsCt) using a frequency of 10 MHz and Rs = 3 (. Compare to the value determined from the chart of Fig. 16.10(a).
Determine T1 for a varactor diode if C0 = 22 pF, TCC = 0.02%/°C, and (C = 0.11 pF due to an increase in temperature above T0 = 25°C.
What region of VR would appear to have the greatest change in capacitance per change in reverse voltage for the diode of Fig. 16.10? Be aware that it is a log-log scale. Then, for this region, determine the ratio of the change in capacitance to the change in voltage.
Using Fig. 16.10 (a), compare the levels at a reverse bias potential of 1 V and 10 V. What is the ratio between the two? If the resonant frequency is 10 MHz, what is the bandwidth for each bias voltage? Compare the bandwidths obtained and compare their ratio to the ratio of levels.
Consult a manufacturer's data book and compare the general characteristics of a high-power device (>10A) to a low-power unit (
What are the essential differences between a semiconductor junction diode and a tunnel diode?
Note in the equivalent circuit of Fig. 16.14 that the capacitor appears in parallel with the negative resistance. Determine the reactance of the capacitor at 1 MHz and 100 MHz if C = 5 pF, and determine the total impedance of the parallel combination (with R = -152 () at each frequency. Is the
Determine the negative resistance for the tunnel diode of Fig. 16.13 between VT = 0.1 V and VT = 0.3 V.
Determine the stable operating points for the network of Fig. 16.17 if E = 2 V,R = 0.39 k(, and the tunnel diode of Fig. 16.13 is employed. Use typical values from Table 16.1.
a. Consult Fig. 16.2. Compare the dynamic resistances of the diodes in the forward-bias regions, b. How do the levels of Is and Vz compare?
For E = 0.5 V and R = 51(, sketch vT for the network of Figure 16.18 and the tunnel diode of Fig. 16.13.
Determine the frequency of oscillation for the network of Fig. 16.19 if L = 5mH, R1 = 10 (, and C = 1 (F.
Determine the energy associated with the photons of green light if the wavelength is 5000 A. Give your answer in joules and electron volts.
Referring to Fig. 16.22, determine I( if V( = 30 V and the light intensity is 4 ( 10-9 W/m2.
Determine the voltage drop across the resistor of Fig. 16.21 if the incident flux is 3000 fc, V( = 25 V, and R = 100 k(. Use the characteristics of Fig. 16.22.
What is the approximate rate of change of resistance with illumination for a photoconductive cell with the characteristics of Fig. 16.28 for the ranges (a) 0.1 ( 10 k(, (b) 1 ( 10 k(, and (c) 10 ( k(? (This is a log scale.) Which region has the greatest rate of change in resistance with
Using the data of Fig. 16.5, estimate the reverse leakage current at a temperature of 50°C. Assume a linear relationship between the two quantities.
Using the data provided in Fig. 16.29, sketch a curve of percentage conductance versus temperature for 0.01, 1.0, and 100 fc. Are there any noticeable effects?
a. Sketch a curve of rise time versus illumination using the data from Fig. 16.29. b. Repeat part (a) for the decay time. c. Discuss any noticeable effects of illumination in parts (a) and (b).
Which colors is the CdS unit of Fig. 16.29 most sensitive to?
a. Through the use of Fig. 16.33, determine the relative radiant intensity at an angle of 25° for a package with a flat glass window, b. Plot a curve of relative radiant intensity versus degrees for the flat package.
What are the relative advantages and disadvantages of an LCD display as compared to an LED display?
(a) Using the electrical characteristics of Fig. 16.5, find the reactance of the capacitor at a frequency of 1 MHz and a reverse voltage of 1 V. (b) Find the forward dc resistance of the diode at 10 mA.
If the power rating of a solar cell is determined on a very rough scale by the product VOCISC, is the greatest rate of increase obtained at lower or higher levels of illumination? Explain your reasoning.
a. Sketch a curve of output current versus power density at an output voltage of 0.15 V using the characteristics of Fig. 16.48. b. Sketch a curve of output voltage versus power density at a current of 19 mA. c. Is either of the curves from parts (a) and (b) linear within the limits of the maximum
For the thermistor of Fig. 16.49, determine the dynamic rate of change in specific resistance with temperature at T = 20°C. How does this compare to the value determined at T = 300°C? From the results, determine whether the greatest change in resistance per unit change in temperature occurs at
Using the information provided in Fig. 16.49, determine the total resistance of a 2-cm length of the material having a perpendicular surface area of 1 cm2 at a temperature of 0°C. Note the vertical log scale.
In Fig. 16.52, V = 0.2 V and /Rvariable = 10(. If the current through the sensitive movement is 2 mA and the voltage drop across the movement is 0 V, what is the resistance of the thermistor?
Using Fig. 16.6(b), what is the voltage drop at a current of 10 mA and a temperature of 25°C? What is the voltage drop at 10 mA if the temperature is raised to the boiling point of water (100°C)? Assume a linear relationship between temperature levels and forward voltage drop. What is the effect
a. Determine the transition capacitance of a diffused junction varicap diode at a reverse potential of 4.2 V if C(0) = 80 pF and Vr = 0.7 V. b. From the information of part (a), determine the constant K in Eq. (16.2).
a. For a varicap diode having the characteristics of Fig. 16.7, determine the difference in capacitance between reverse-bias potentials of -3 V and -12 V. b. Determine the incremental rate of change (AC/AV) at V = -8 V. How does this value compare with the incremental change determined at -2 V?
a. In Fig. 17.23, if Vz = 50 V, determine the maximum possible value the capacitor C1 can charge to {VGK ( 0.7 V). b. Determine the approximate discharge time (5() for R3 = 20k(. c. Determine the internal resistance of the GTO if the rise time is one-half the decay period determined in part (b).
For the network of Fig. 17.29, if VBR = 6 V, V = 40V, R = l0k( C = 0.2(F, and VGK (firing potential) = 3 V, determine the time period between energizing the network and the turning on of the SCR.
For the network of Fig. 17.41, in which V = 40V,( = 0.6, Vv = 1 V, IV= 8 mA, and IP = 10 (A, determine the range of R1 for the triggering network.
For a unijunction transistor with VBB = 20 V, ( = 0.65, RB1 = 2k( (IE = 0), and VD = 0.7 V, determine: a. RB2. b. RBB. c. VRB1. d. VP.
Given the relaxation oscillator of Fig. 17.69:a. Find RBl and RB2 at IE = 0 A.b. Determine VP, the voltage necessary to turn on the UJT.c. Determine whether R1 is within the permissible range of values defined by Eq. (17.8).d. Determine the frequency of oscillation if RB1 = 200 ( during the
Design a high-isolation OR-gate employing phototransistors and LEDs.
a. Determine from Fig. 17.55 the average change in ICEO per degree change in temperature for the range 25°C to 50°C. b. Can the results of part (a) be used to determine the level of ICEO at 35°C? Test your theory.
a. Sketch the maximum-power curve of PD = 200 mW on the graph of Fig. 17.57. List any noteworthy conclusions. b. Determine (dc (defined by IC/IF) for the system at VCE = 15 V, IF = 10 mA. c. Compare the results of part (b) with those obtained from Fig. 17.56 at IF = 10 mA. Do they compare? Should
Referring to Fig. 17.58, determine the collector current above which the switching time does not change appreciably for RL = 1 k(, and RL = 100(. b. At IC = 6 mA, how does the ratio of switching times for RL = 1 k( and RL = 100 ( compare to the ratio of resistance levels?
Using the data provided in Example 17.3, determine the impedance of the PUT at the firing and valley points. Are the approximate open- and short-circuit states verified?
Can Eq. (17.24) be derived exactly as shown from Eq. (17.23)? If not, what element is missing in Eq. (17.24)?
a. Will the network of Example 17.3 oscillate if VBB is changed to 10 V? What minimum value of VBB is required (Vv a constant)? b. Referring to the same example, what value of R would place the network in the stable "on" state and remove the oscillatory response of the system? c. What value of R
a. At high levels of gate current, the characteristics of an SCR approach those of what two-terminal device? b. At a fixed anode-to-cathode voltage less than V(BR)F*, what is the effect on the firing of the SCR as the gate current is reduced from its maximum value to the zero level? c. At a fixed
a. Based on Fig. 17.8, will a gate current of 50 mA fire the device at room temperature (25°C)? b. Repeat part (a) for a gate current of 10 mA. c. Will a gate voltage of 2.6 V trigger the device at room temperature? d. Is VG = 6 V, IG = 800 mA a good choice for firing conditions? Would VG = 4 V,
Refer to the charging network of Fig. 17.13. a. Determine the dc level of the full-wave rectified signal if a 1: 1 transformer is employed. b. If the battery in its uncharged state is sitting at 11 V, what is the anode-to-cathode voltage drop across SCR1? c. What is the maximum possible value of VR
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