All Matches

Solution Library

Expert Answer

Textbooks

Search Textbook questions, tutors and Books

Oops, something went wrong!

Change your search query and then try again

Result Not Found

Books FREE
Tutors
Study Help
Ask a Question

Search
Sign In
Register

study help
engineering
electrical engineering

Questions and Answers of Electrical Engineering

Define the region of operation for the JFET of Fig. 6.57 if VDSMax = 25 V and PDmax = 120 mW.
Using the characteristics of Fig. 6.25, determine ID at VGS = -0.7 V and VDS = 10 V.
Using the characteristics of Fig. 6.11, determine ID for the following levels of VGS (with VDS = Vp). CGS = -IV. VGS = -1.5V. VGS = -1.8V. VGS = -4V. VGS = -6V.
Determine VP for the characteristics of Fig. 6.25 using IDSS and ID at some value of VGS. That is, simply substitute into Shockley's equation and solve for VP. Compare the result to the assumed value
Using IDSS = 9 mA and VP = -3 V for the characteristics of Fig. 6.25, calculate ID at VGS = -1 V using Shockley's equation and compare to the level in Fig. 6.25.
a. Calculate the resistance associated with the JFET of Fig. 6.25 for VGS = 0V from ID = 0 mA to 4 mA. b. Repeat part (a) for VGS = -0.5 V from ID = 0 to 3 mA. c. Assigning the label ro to the result
In what ways is the construction of a depletion-type MOSFET similar to that of a JFET? In what ways is it different?
Given a depletion-type MOSFET with IDSS = 6 mA and VP = -3 V, determine the drain current at VGS = - 1, 0, 1, and 2 V. Compare the difference in current levels between - 1 V and 0V with the
Sketch the transfer and drain characteristics of an n-channel depletion-type MOSFET with IDSS = 12 mA and VP = -8 V for a range of VGS = - VP to VGS = 1 V.
Given ID = 14 mA and VGS = 1 V, determine VP if IDSS = 9.5 mA for a depletion-type MOSFET,
Given ID = 4 mA at VGS = -2 V, determine IDSS if VP = -5 V.
a. Determine VDS for VGS = 0 V and ID = 6 mA using the characteristics of Fig. 6.11. b. Using the results of part (a), calculate the resistance of the JFET for the region ID = 0 to 6 mA for VGS = 0
Using an average value of 2.9 mA for the IDSS of the 2N3797 MOSFET of Fig. 6.34, determine the level of VGS that will result in a maximum drain current of 20 mA if VP = -5 V.
If the drain current for the 2N3797 MOSFET of Fig. 6.34 is 8 mA, what is the maximum permissible value of VDS utilizing the maximum power rating?
a. What is the significant difference between the construction of an enhancement-type MOSFET and a depletion-type MOSFET? b. Sketch a p-channel enhancement-type MOSFET with the proper biasing applied
a. Sketch the transfer and drain characteristics of an n-channel enhancement-type MOSFET if VT = 3.5 V and k = 0.4 x 10-3 A/V2. b. Repeat part (a) for the transfer characteristics if VT is
a. Given VGS (Th) = 4 V and ID(on) = 4 mA at VG5(on) = 6 V, determine k and write the general expression for ID in the format of Eq. (6.15). b. Sketch the transfer characteristics for the device of
Given the transfer characteristics of Fig. 6.58, determine VT and k and write the general equation for ID.
Given k = 0.4 x 10-3 A/V2 and ID(on) = 3 mA with VGS(on) = 4 V, determine VT.
The maximum drain current for the 2N4351 n-channel enhancement-type MOSFET is 30mA determine VGS at this current level if k = 0.06 x 10-3 A/V2 and VT is the maximum value.
Does the current of an enhancement-type MOSFET increase at about the same rate as a depletion-type MOSFET for the conduction region? Carefully review the general format of the equations, and if your
Sketch the transfer characteristics of a p-channel enhancement-type MOSFET if VT = -5 V and k = 0.45 x 10-3A/V2.
Using the characteristics of Fig. 6.11: a. Determine the difference in drain current (for VDS > VP) between VGS = 0V and VGS = -1 V. b. Repeat part (a) between VGS = -1 and -2 V. c. Repeat part (a)
a. Describe in your own words the operation of the network of Fig. 6.48 with Vi = 0 V. b. If the "on" MOSFET of Fig. 6.48 (with Vi = 0 V) has a drain current of 4 mA with VDS = 0.1 V, what is the
What are the major differences between the collector characteristics of a BJT transistor and the drain characteristics of a JFET transistor? Compare the units of each axis and the controlling
a. Describe in your own words why IG is effectively 0 A for a JFET transistor. b. Why is the input impedance to a JFET so high? c. Why is the terminology field effect appropriate for this important
Given IDSS = 12mA and |Vp| = 6V, Sketch a probable distribution of the characteristic curves for the JFET (similar to Fig. 6.11).
For the fixed-bias configuration of Fig. 7.80: a. Sketch the transfer characteristics of the device. b. Superimpose the network equation on the same graph. c. Determine IDQ and VDSQ
For the network of Fig. 7.88, determine:a. 1D.b. VDS.c. VD.d. VS.
Find VS for the network of Fig. 7.89
For the network of Fig. 7.90, determine:a. VG.b. IDQ and VGSQc. VD and VSd. V
a. Repeat Problem 12 with RS = 0.51 kÎ© what is the effect of a smaller RS on ID and VGSQ?b. What is the minimum possible value of RS for the network of Fig. 7.90?
For the network of Fig. 7.91, VD = 9B Determine:a. ID.b. VS and VDSc. VG and VGSd. VP
For the network of Fig. 7.92, determine:a. IDQ and VGSQ.b. VDS and VS.
Given VDS = 4 V for the network of Fig. 7.93, determine:a. 1D.b. VD and VSc. VGS
For the network of Fig. 7.94a. Find IDQ-b. Determine VDQ and VDSQ.c. Find the power supplied by the source and dissipated by the device.
For the self-bias configuration of Fig. 7.95, determine:a. IDQ and VGSQ.b. VDS and VD.
For the network of Fig. 7.96, determine:a. IDQ and VGSQ.b. VDS and VS.
For the fixed-bias configuration of Fig. 7.81, determine:a. IDQ and VGSQ using a purely mathematical approach.b. Repeat part (a) using a graphical approach and compare results.c. Find VDS, VD, VG,
For the network of Fig. 7.97, determine:a. IDQ.b. VGSQ and VDSQ.c. VD and VS.d. VDS.
For the voltage-divider configuration of Fig. 7.98, determine:a. IDQ and VGSQb. VD and VS.
For the network of Fig. 7.99, determine:a. VG.b. VGSQ and IDQ.c. IE.d. IB.e. VD.f. VC.
For the combination network of Fig. 7.100, determine:a. VB and VG.b. VE.c. IE, IC, and ID.d. IB.e. VC, VS, and VD.f. VCEg. VDS.
Design a self-bias network using a JFET transistor with IDSS = 8 mA and VP = -6 V to have a Q-point at IDQ = 4 mA using a supply of 14 V. Assume that RD = 3RS and use standard values.
Design a voltage-divider bias network using a depletion-type MOSFET with IDSS = 10 mA and VP = -4 V to have a Q-point at IDQ = 2.5 mA using a supply of 24 V. In addition, set VG = 4 V and use RD =
Design a network such as appears in Fig. 7.40 using an enhancement-type MOSFET with VGS(Th) = 4 V and k = 0.5 x 10-3 A/V2 to have a Q-point of IDQ = 6 mA. Use a supply of 16 V and standard values.
What do the readings for each configuration of Fig. 7.101 suggest about the operation of the network?a.b. c.
Although the readings of Fig. 7.102 initially suggest that the network is behaving properly, determine a possible cause for the undesirable state of the network.
The network of Fig. 7.103 is not operating properly. What is the specific cause for its failure?
Given the measured value of VD in Fig. 7.82, determine:a. ID.b. VDS.c VGG.
For the network of Fig. 7.104, determine:a. IDQ and VGSQb. VDS.c VD.
For the network of Fig. 7.105, determine:a. IDQ and VGSQb. VDSc. VD.
Repeat Problem 1 using the universal JFET bias curve.In Problem 1For the fixed-bias configuration of Fig. 7.80:
Repeat Problem 6 using the universal JFET bias curve.In problem 6For the self-bias configuration of Fig. 7.85:
Repeat Problem 12 using the universal JFET bias curve.In problem 12For the network of Fig. 7.90, determine:
Repeat Problem 15 using the universal JFET bias curve.In problem 15For the network of Fig. 7.92, determine:
Determine VD for the fixed-bias configuration of Fig. 7.83.
Determine VD for the fixed-bias configuration of Fig. 7.84.
For the self-bias configuration of Fig. 7.85:a. Sketch the transfer curve for the device.b. Superimpose the network equation on the same graph.c. Determine IDQ and VGSQ.d. Calculate VDS, VD, VG, and
Determine IDQ for the network of Fig. 7.84 using a purely mathematical approach. That is, establish a quadratic equation for 1D and choose the solution compatible with the network characteristics.
For the network of Fig. 7.86, determine:a. VGSQ and IDQb. VDS, VD, VC and VS.
Given the measurement VS = 1.7 V for the network of Fig. 7.87, determine:a. IDQ.b- VGSQ.C- IDSS-d. VD.e. VDS.
Using the transfer characteristic of Fig. 8.71: a. What is the value of gm0? b. Determine gm at VGS = - 1.5 V graphically.
Using the drain characteristic of Fig. 8.72:a. What is the value of rd for VGS = 0 V?b. What is the value of gm0 at VDS = 10 V?
For a 2N4220 n-channel JFET [yfs (minimum) = 750μS, yos (maximum) = 10μS]: a. What is the value of gm? b. What is the value of rd?
a. Plot gm versus VGS for an n-channel JFET with IDSS = 8 mA and VP = -6 V. b. Plot gm versus ID for the same n-channel JFET as part (a).
Sketch the ac equivalent model for a JFET if IDSS = 10 mA, VP = -4 V, VGSQ = -2 V, and yos = 25 μS.
Determine Zi, Zo and Av, for the network of Fig. 8.73 if IDSS = 10 mA, VP = -4V, and rd = 40 kÎ©.
Determine Zi Zo, and Av for the network of Fig. 8.73 if 1DSS = 12 mA, VP = -6V, and yos = 40Î¼S.
Determine Zi, Zo and Av for the network of Fig. 8.74 if yfs = 3000 Î¼S and yos = 50 jus.
Determine Zi, Zo, and Av for the network of Fig. 8.75 if IDSS = 6 mA, VP = -6 V, and yos = 40 Î¼S.
Determine Zi Zo, and Av for the network of Fig. 8.74 if the 20-Î¼F capacitor is removed and the parameters of the network are the same as in Problem 19. Compare results with those of
Repeat Problem 19 if yos is 10 Î¼S. Compare the results to those of Problem 19.In problem 19Determine Zi, Zo and Av for the network of Fig. 8.74 if yfs = 3000 Î¼S and yos =
Determine Zi Zo, and Vo for the network of Fig. 8.76 if Vi = 20 mV.
Determine Zi" Zo, and Vo for the network of Fig. 8.76 if Vi, = 20 mV and the capacitor CS is removed.
Repeat Problem 23 if rd = 20 kÎ© and compare results.In problem 23Determine Zi Zo, and Vo for the network of Fig. 8.76 if Vi = 20 mV.
Repeat Problem 24 if rd = 20 kÎ© and compare results.In problem 24Determine Zi" Zo, and Vo for the network of Fig. 8.76 if Vi, = 20 mV and the capacitor CS is removed.
Determine Zi Zo, and Vo for the network of Fig. 8.77 if Vi = 0.1 mV.
Repeat Problem 30 if rd = 25 kÎ©.In problem 30Determine Zi Zo and A, for the network of Fig. 8.79.
Determine Zi Zo, and Av for the network of Fig. 8.78 if rd = 33 kÎ©.
Determine Zi Zo and A, for the network of Fig. 8.79.
Repeat Problem 27 if rd = 20 kÎ©.In Problem 27Determine Zi Zo, and Vo for the network of Fig. 8.77 if Vi = 0.1 mV.
Determine Zi, Zo, and Av for the network of Fig. 8.80.
Determine Vo for the network of Fig. 8.81 if yos = 20 Î¼S.
Determine Zi Zo, and Av, for the network of Fig. 8.82 if rd = 60 kÎ©.
Repeat Problem 34 if rd = 25 kÎ©.In problem 34Determine Zi Zo, and Av, for the network of Fig. 8.82 if rd = 60 kÎ©.
Determine Vo for the network of Fig. 8.83 if Vi = 4 mV.
Determine Zi Zo and Av for the network of Fig. 8.84.
Determine Zi Zo, and Av for the amplifier of Fig. 8.85 if k = 0.3 x 10-3.
Repeat Problem 39 if k drops to 0.2 X 10-3. Compare results.In problem 39Determine Zi Zo, and Av for the amplifier of Fig. 8.85 if k = 0.3 x 10-3.
Determine Vo for the network of Fig. 8.86 if Vi = 20 mV.
Determine Vo for the network of Fig. 8.86 if Vi = 4mV, VGS (Th) = 4 V, and I = 4 mA, with VGS(on) = 7 V and yos = 20 Î¼S.
Determine the output voltage for the network of Fig. 8.87 if Vi, = 0.8 mV and rd = 40 kÎ©.
Design the fixed-bias network of Fig. 8.88 to have a gain of 8.
Design the self-bias network of Fig. 8.89 to have a gain of 10. The device should be biased at VGSQ = 1/3VP.
For a JFET having gm = 6 mS at VGSQ = -1 V, what is the value of IDSS if VP = -2.5 V?
A JFET (IDSS = 10mA, VP = -5V) is biased at ID = IDSS / 4. What is the value of gm at that bias point?
Determine the value of gm for a JFET (lDSS = 8 mA, VP = -5 V) when biased at VGSQ = VP/4.
For a JFET having specified values of yfs = 4.5 mS and yos = 25 μS, determine the device output impedance Z0 (FET) and device ideal voltage gain Av, (FET).
Given the characteristics of Fig. 9.73, sketch:a. The normalized gain.b. The normalized dB gain (and determine the bandwidth and cutoff frequencies).

Showing 3200 - 3300 of 3459

First
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35

Get In Touch

About Us
Contact Us
Career
Jobs
FAQ
Campus Ambassador

Company Info

Security
Copyrights
Privacy Policy
Terms & Condition
SolutionInn Fee
Scholarship

Services

Sitemap
Fun
Definitions
Become Tutor
Study Help Categories
Recent Questions
Expert Questions

Copyright © 2024 SolutionInn All Rights Reserved.

Get the SolutionInn - Study Help App