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computer science
systems analysis and design 12th

Questions and Answers of Systems Analysis And Design 12th

Sketch the general current-voltage characteristics for both enhancement-mode and depletion-mode MOSFETs. Define the saturation and nonsaturation bias regions.
Describe what is meant by threshold voltage, width-to-length ratio, and drain-tosource saturation voltage.
Describe the channel length modulation effect and define the parameter \(\lambda\). Describe the body effect and define the parameter \(\gamma\).
Describe a simple common-source MOSFET circuit with an n-channel enhancement-mode device and discuss the relation between the drain-to-source voltage and gate-to-source voltage.
How do you prove that a MOSFET is biased in the saturation region?
In the dc analysis of some MOSFET circuits, quadratic equations in gate-tosource voltage are developed. How do you determine which of the two possible solutions is the correct one?
How can the \(Q\)-point be stabilized against variations in transistor parameters?
Describe the current-voltage relation of an n-channel enhancement-mode MOSFET with the gate connected to the drain.
Describe the current-voltage relation of an n-channel depletion-mode MOSFET with the gate connected to the source.
Describe a MOSFET NOR logic circuit.
Describe how a MOSFET can be used to amplify a time-varying voltage.
Describe the basic operation of a junction FET.
What is the difference between a MESFET and a pn junction FET?
The current in an NMOS transistor is \(0.5 \mathrm{~mA}\) when \(V_{G S}-V_{T N}=0.6 \mathrm{~V}\) and \(1.0 \mathrm{~mA}\) when \(V_{G S}-V_{T N}=1.0 \mathrm{~V}\). The device is operating in the
For an n-channel depletion-mode MOSFET, the parameters are \(V_{T N}=\) \(-2.5 \mathrm{~V}\) and \(K_{n}=1.1 \mathrm{~mA} / \mathrm{V}^{2}\).(a) Determine \(I_{D}\) for \(V_{G S}=0\); and: (i) \(V_{D
The threshold voltage of each transistor in Figure P3.6 is \(V_{T P}=-0.4 \mathrm{~V}\). Determine the region of operation of the transistor in each circuit. 2.2 V Figure P3.6 (a) 2.2 V 2 V (b) (c) 2
Consider an \(\mathrm{n}\)-channel depletion-mode MOSFET with parameters \(V_{T N}=-1.2 \mathrm{~V}\) and \(k_{n}^{\prime}=120 \mu \mathrm{A} / \mathrm{V}^{2}\). The drain current is \(I_{D}=0.5
Determine the value of the process conduction parameter \(k_{n}^{\prime}\) for an NMOS transistor with \(\mu_{n}=600 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}\) and for an oxide thickness
An n-channel enhancement-mode MOSFET has parameters \(V_{T N}=0.4 \mathrm{~V}\), \(W=20 \mu \mathrm{m}, L=0.8 \mu \mathrm{m}, t_{\mathrm{ox}}=200 Å\), and \(\mu_{n}=650 \mathrm{~cm}^{2} /
An NMOS device has parameters \(V_{T N}=0.8 \mathrm{~V}, L=0.8 \mu \mathrm{m}\), and \(k_{n}^{\prime}=120 \mu \mathrm{A} / \mathrm{V}^{2}\). When the transistor is biased in the saturation region
A particular NMOS device has parameters \(V_{T N}=0.6 \mathrm{~V}, L=0.8 \mu \mathrm{m}\), \(t_{\mathrm{ox}}=200 Å\), and \(\mu_{n}=600 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}\). A drain current of
MOS transistors with very short channels do not exhibit the square law voltage relation in saturation. The drain current is instead given by\(I_{D}=W C_{\mathrm{ox}}\left(V_{G S}-V_{T N}\right)
For a p-channel enhancement-mode MOSFET, \(k_{p}^{\prime}=50 \mu \mathrm{A} / \mathrm{V}^{2}\). The device has drain currents of \(I_{D}=0.225 \mathrm{~mA}\) at \(V_{S G}=V_{S D}=2 \mathrm{~V}\) and
For a p-channel enhancement-mode MOSFET, the parameters are \(K_{P}=\) \(2 \mathrm{~mA} / \mathrm{V}^{2}\) and \(V_{T P}=-0.5 \mathrm{~V}\). The gate is at ground potential, and the source and
The transistor characteristics \(i_{D}\) versus \(v_{S D}\) for a PMOS device are shown in Figure P3.15. (a) Is this an enhancement-mode or depletion-mode device?(b) Determine the values for
A p-channel depletion-mode MOSFET has parameters \(V_{T P}=+2 \mathrm{~V}\), \(k_{p}^{\prime}=40 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(W / L=6\). Determine \(V_{S D}\) (sat) for: (a) \(V_{S G}=-1
Calculate the drain current in a PMOS transistor with parameters \(V_{T P}=-0.5 \mathrm{~V}, k_{p}^{\prime}=50 \mu \mathrm{A} / \mathrm{V}^{2}, W=12 \mu \mathrm{m}, L=0.8 \mu \mathrm{m}\), and with
Determine the value of the process conduction parameter \(k_{p}^{\prime}\) for a PMOS transistor with \(\mu_{p}=250 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}\) and for an oxide thickness
Enhancement-mode NMOS and PMOS devices both have parameters \(L=4 \mu \mathrm{m}\) and \(t_{\mathrm{ox}}=500 Å\). For the NMOS transistor, \(V_{T N}=+0.6 \mathrm{~V}\), \(\mu_{n}=675
For an NMOS enhancement-mode transistor, the parameters are: \(V_{T N}=\) \(1.2 \mathrm{~V}, K_{n}=0.20 \mathrm{~mA} / \mathrm{V}^{2}\), and \(\lambda=0.01 \mathrm{~V}^{-1}\). Calculate the output
The parameters of an n-channel enhancement-mode MOSFET are \(V_{T N}=0.5 \mathrm{~V}, k_{n}^{\prime}=120 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(W / L=4\). What is the maximum value of \(\lambda\)
An enhancement-mode NMOS transistor has parameters \(V_{T N O}=0.8 \mathrm{~V}\), \(\gamma=0.8 \mathrm{~V}^{1 / 2}\), and \(\phi_{f}=0.35 \mathrm{~V}\). At what value of \(V_{S B}\) will the
An NMOS transistor has parameters \(V_{T O}=0.75 \mathrm{~V}, k_{n}^{\prime}=80 \mu \mathrm{A} / \mathrm{V}^{2}\), \(W / L=15, \phi_{f}=0.37 \mathrm{~V}\), and \(\gamma=0.6 \mathrm{~V}^{1 / 2}\).(a)
(a) A silicon dioxide gate insulator of an MOS transistor has a thickness of \(t_{\mathrm{ox}}=120 Å\). (i) Calculate the ideal oxide breakdown voltage. (ii) If a safety factor of three is required,
In a power MOS transistor, the maximum applied gate voltage is \(24 \mathrm{~V}\). If a safety factor of three is specified, determine the minimum thickness necessary for the silicon dioxide gate
In the circuit in Figure P3.26, the transistor parameters are \(V_{T N}=0.8 \mathrm{~V}\) and \(K_{n}=0.5 \mathrm{~mA} / \mathrm{V}^{2}\). Calculate \(V_{G S}, I_{D}\), and \(V_{D S}\). VDD = 10 V R
The transistor in the circuit in Figure P3.27 has parameters \(V_{T N}=0.8 \mathrm{~V}\) and \(K_{n}=0.25 \mathrm{~mA} / \mathrm{V}^{2}\). Sketch the load line and plot the \(Q\)-point for (a) \(V_{D
The transistor in Figure P3.28 has parameters VTN = 0.4V, k = 120 A/V, and W/L = 80. Design the circuit such that IQ = 0.8mA and Rin = 200 ks2. Rin VDD = 1.8 V RD= R 0.5 R- www Figure P3.28
The transistor in the circuit in Figure P3.29 has parameters VTP = -0.8 V and Kp = 0.20mA/V. Sketch the load line and plot the Q-point for (a) VDD 3.5V, RD = 1.2k2 and (b) VDD = 5 V, RD = 4k. What is
Consider the circuit in Figure P3.30. The transistor parameters are VTP = -0.8 V and Kp = 0.5mA/V. Determine ID, VSG, and VSD. R = 8 k2 R 22 ks22 ww ww Figure P3.30 -3 V +3 V Rs = 0.5 RD= 5
For the circuit in Figure P3.31, the transistor parameters are Vp = -0.8 V and Kp = 200 A/V. Determine Vs and VSD. +5 V IQ = 0.4 mA (+ Vs RG = 50kQ RD=5k2 Figure P3.31 -5 V
Design a MOSFET circuit in the configuration shown in Figure P3.26. The transistor parameters are VTN = 0.4V and k = 120 A/V, and = 0. The circuit parameters are VDD =3.3V and Rp = 5 k2. Design the
Consider the circuit shown in Figure P3.33. The transistor parameters are \(V_{T N}=0.4 \mathrm{~V}\) and \(k_{n}^{\prime}=120 \mu \mathrm{A} / \mathrm{V}^{2}\). The voltage drop across \(R_{S}\) is
The transistor parameters for the transistor in Figure P3.34 are \(V_{T N}=0.4 \mathrm{~V}, k_{n}^{\prime}=120 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(W / L=50\). (a) Determine \(V_{G S}\) such that
For the transistor in the circuit in Figure P3.35, the parameters are \(V_{T N}=0.4 \mathrm{~V}, k_{n}^{\prime}=120 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(W / L=25\). Determine \(V_{G S}, I_{D}\),
Design a MOSFET circuit with the configuration shown in Figure P3.30. The transistor parameters are \(V_{T P}=-0.6 \mathrm{~V}, k_{p}^{\prime}=50 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(\lambda=0\).
The parameters of the transistors in Figures P3.37 (a) and (b) are \(K_{n}=\) \(0.5 \mathrm{~mA} / \mathrm{V}^{2}, V_{T N}=1.2 \mathrm{~V}\), and \(\lambda=0\). Determine \(v_{G S}\) and \(v_{D S}\)
For the circuit in Figure P3.38, the transistor parameters are \(V_{T N}=0.6 \mathrm{~V}\) and \(K_{n}=200 \mu \mathrm{A} / \mathrm{V}^{2}\). Determine \(V_{S}\) and \(V_{D}\). +9 V Rp=24 kQ VD
(a) Design the circuit in Figure P3.39 such that \(I_{D Q}=0.50 \mathrm{~mA}\) and \(V_{D}=\) \(1 \mathrm{~V}\). The transistor parameters are \(K_{n}=0.25 \mathrm{~mA} / \mathrm{V}^{2}\) and \(V_{T
The PMOS transistor in Figure P3.40 has parameters \(V_{T P}=-0.7 \mathrm{~V}\), \(k_{p}^{\prime}=50 \mu \mathrm{A} / \mathrm{V}^{2}, L=0.8 \mu \mathrm{m}\), and \(\lambda=0\). Determine the values
Design the circuit in Figure P3.41 so that \(V_{S D}=2.5 \mathrm{~V}\). The current in the bias resistors should be no more than 10 percent of the drain current. The transistor parameters are \(V_{T
(a) Design the circuit in Figure P3.42 such that \(I_{D Q}=0.25 \mathrm{~mA}\) and \(V_{D}=-2 \mathrm{~V}\). The nominal transistor parameters are \(V_{T P}=-1.2 \mathrm{~V}, k_{p}^{\prime}=\) \(35
The parameters of the transistor in the circuit in Figure P3.43 are \(V_{T P}=\) \(-1.75 \mathrm{~V}\) and \(K_{p}=3 \mathrm{~mA} / \mathrm{V}^{2}\). Design the circuit such that \(I_{D}=5
For each transistor in the circuit in Figure P3.44, \(k_{n}^{\prime}=120 \mu \mathrm{A} / \mathrm{V}^{2}\). Also for \(M_{1}, W / L=4\) and \(V_{T N}=0.4 \mathrm{~V}\), and for \(M_{2}, W / L=1\) and
Consider the circuit in Figure P3.44. The transistor parameters for \(M_{1}\) are \(V_{T N}=0.4 \mathrm{~V}\) and \(k_{n}^{\prime}=120 \mu \mathrm{A} / \mathrm{V}^{2}\), and for \(M_{2}\) are \(V_{T
The transistors in the circuit in Figure P3.46 both have parameters \(V_{T N}=0.4 \mathrm{~V}\) and \(k_{n}^{\prime}=120 \mu \mathrm{A} / \mathrm{V}^{2}\).(a) If the width-to-length ratios of
Consider the circuit in Figure P3.47. (a) The nominal transistor parameters are \(V_{T N}=0.6 \mathrm{~V}\) and \(k_{n}^{\prime}=120 \mu \mathrm{A} / \mathrm{V}^{2}\). Design the width-to-length
The transistors in the circuit in Figure 3.36 in the text have parameters \(V_{T N}=0.6 \mathrm{~V}, k_{n}^{\prime}=120 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(\lambda=0\). The width-to-length ratio
For the circuit in Figure 3.39 in the text, the transistor parameters are: \(V_{T N D}=0.6 \mathrm{~V}, \quad V_{T N L}=-1.2 \mathrm{~V}, \quad \lambda=0, \quad\) and \(\quad k_{n}^{\prime}=120 \mu
Consider the circuit in Figure P3.50. The circuit parameters are \(V_{D D}=3 \mathrm{~V}\) and \(R_{D}=30 \mathrm{k} \Omega\). The transistor parameters are \(V_{T N}=0.4 \mathrm{~V}\) and
The transistor in the circuit in Figure P3.51 is used to turn the LED on and off. The transistor parameters are \(V_{T N}=0.6 \mathrm{~V}, k_{n}^{\prime}=80 \mu \mathrm{A} / \mathrm{V}^{2}\), and
The circuit in Figure P3.52 is another configuration used to switch an LED on and off. The transistor parameters are \(V_{T P}=-0.6 \mathrm{~V}, k_{p}^{\prime}=40 \mu \mathrm{A} / \mathrm{V}^{2}\),
For the two-input NMOS NOR logic gate in Figure 3.46 in the text, the transistor parameters are \(V_{T N 1}=V_{T N 2}=0.6 \mathrm{~V}, \lambda_{1}=\lambda_{2}=0\), and \(k_{n 1}^{\prime}=k_{n
All transistors in the current-source circuit shown in Figure 3.49 (a) in the text have parameters \(V_{T N}=0.4 \mathrm{~V}, k_{n}^{\prime}=120 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(\lambda=0\).
All transistors in the current-source circuit shown in Figure 3.49 (b) in the text have parameters \(V_{T P}=-0.4 \mathrm{~V}, k_{p}^{\prime}=50 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(\lambda=0\).
Consider the circuit shown in Figure 3.50 in the text. The threshold voltage and process conduction parameter for each transistor is \(V_{T N}=0.6 \mathrm{~V}\) and \(k_{n}^{\prime}=120 \mu
The gate and source of an n-channel depletion-mode JFET are connected together. What value of \(V_{D S}\) will ensure that this two-terminal device is biased in the saturation region. What is the
For an n-channel JFET, the parameters are \(I_{D S S}=6 \mathrm{~mA}\) and \(V_{P}=-3 \mathrm{~V}\). Calculate \(V_{D S}\) (sat). If \(V_{D S}>V_{D S}\) (sat), determine \(I_{D}\) for: (a) \(V_{G
A p-channel JFET biased in the saturation region with \(V_{S D}=5 \mathrm{~V}\) has a drain current of \(I_{D}=2.8 \mathrm{~mA}\) at \(V_{G S}=1 \mathrm{~V}\) and \(I_{D}=0.30 \mathrm{~mA}\) at
Consider the p-channel JFET in Figure P3.60. Determine the range of \(V_{D D}\) that will bias the transistor in the saturation region. If \(I_{D S S}=6 \mathrm{~mA}\) and \(V_{P}=2.5 \mathrm{~V}\),
Consider a GaAs MESFET. When the device is biased in the saturation region, we find that \(I_{D}=18.5 \mu \mathrm{A}\) at \(V_{G S}=0.35 \mathrm{~V}\) and \(I_{D}=86.2 \mu \mathrm{A}\) at \(V_{G
The threshold voltage of a GaAs MESFET is \(V_{T N}=0.24 \mathrm{~V}\). The maximum allowable gate-to-source voltage is \(V_{G S}=0.75 \mathrm{~V}\). When the transistor is biased in the saturation
For the transistor in the circuit in Figure P3.63, the parameters are: \(I_{D S S}=\) \(10 \mathrm{~mA}\) and \(V_{P}=-5 \mathrm{~V}\). Determine \(I_{D Q}, V_{G S Q}\), and \(V_{D S Q}\). Cc VDD =
Consider the source follower with the n-channel JFET in Figure P3.64. The input resistance is to be \(R_{\text {in }}=500 \mathrm{k} \Omega\). We wish to have \(I_{D Q}=5 \mathrm{~mA}, V_{D S Q}=\)
The transistor in the circuit in Figure P3.65 has parameters \(I_{D S S}=8 \mathrm{~mA}\) and \(V_{P}=4 \mathrm{~V}\). Design the circuit such that \(I_{D}=5 \mathrm{~mA}\). Assume \(R_{\text {in
For the circuit in Figure P3.66, the transistor parameters are \(I_{D S S}=7 \mathrm{~mA}\) and \(V_{P}=3 \mathrm{~V}\). Let \(R_{1}+R_{2}=100 \mathrm{k} \Omega\). Design the circuit such that \(I_{D
The transistor in the circuit in Figure P3.67 has parameters \(I_{D S S}=8 \mathrm{~mA}\) and \(V_{P}=-4 \mathrm{~V}\). Determine \(V_{G}, I_{D Q}, V_{G S Q}\), and \(V_{D S Q}\). VDD = 20 V R = 140
Consider the circuit in Figure P3.68. The quiescent value of \(V_{D S}\) is found to be \(V_{D S Q}=5 \mathrm{~V}\). If \(I_{D S S}=10 \mathrm{~mA}\), determine \(I_{D Q}, V_{G S Q}\), and \(V_{P}\).
For the circuit in Figure P3.69, the transistor parameters are \(I_{D S S}=4 \mathrm{~mA}\) and \(V_{P}=-3 \mathrm{~V}\). Design \(R_{D}\) such that \(V_{D S}=\left|V_{P}\right|\). What is the value
Consider the source-follower circuit in Figure P3.70. The transistor parameters are \(I_{D S S}=2 \mathrm{~mA}\) and \(V_{P}=2 \mathrm{~V}\). Design the circuit such that \(I_{D Q}=\) \(1
The GaAs MESFET in the circuit in Figure P3.71 has parameters \(k=\) \(250 \mu \mathrm{A} / \mathrm{V}^{2}\) and \(V_{T N}=0.20 \mathrm{~V}\). Let \(R_{1}+R_{2}=150 \mathrm{k} \Omega\). Design the
For the circuit in Figure P3.72, the GaAs MESFET threshold voltage is \(V_{T N}=0.15 \mathrm{~V}\). Let \(R_{D}=50 \mathrm{k} \Omega\). Determine the value of the conduction parameter required so
Using a computer simulation, verify the results of Exercise Ex 3.5.Data From Exercise 3.5:-Figure 3.28:- Ex 3.5: For the transistor in the circuit in Figure 3.28, the nominal parameter val- ues are
(a) Using a computer simulation, plot the voltage transfer characteristics of the CMOS circuit shown in Figure 3.41. Use the parameters given in Example 3.11.(b) Repeat part (a) for the case when the
(a) Using a computer simulation, plot the voltage transfer characteristics of the NMOS circuit shown in Figure 3.46 for \(V_{2}=0\) and \(0 \leq V_{1} \leq 5 \mathrm{~V}\). Use the circuit and
Using a computer simulation, verify the results of Example 3.17 for the multitransistor circuit shown in Figure 3.52. R Rsi Cc V+=5 V R www M RD1 M2 Cc2 ww www R ww Rsi Cs R$2 R = 4 k V-=-5 V Figure
Consider the PMOS circuit shown in Figure 3.30. The circuit is to be redesigned such that \(I_{D Q}=100 \mu \mathrm{A}\) and the Q-point is in the center of the saturation region of the load line.
Consider the circuit in Figure 3.39 with a depletion load. Assume the circuit is biased at \(V_{D D}=3.3 \mathrm{~V}\), and assume transistor threshold voltages of \(V_{T N D}=0.4 \mathrm{~V}\) and
The constant-current source in Figure 3.50 is to be redesigned. The bias voltages are \(V^{+}=3.3 \mathrm{~V}\) and \(V^{-}=-3.3 \mathrm{~V}\). The parameters of all transistors are \(V_{T N}=0.4
Consider the multitransistor circuit in Figure 3.52. The bias voltages are changed to \(V^{+}=3.3 \mathrm{~V}\) and \(V^{-}=-3.3 \mathrm{~V}\). The transistor parameters are \(V_{T N}=0.4
Return to the Chapter 6 material on PIECES and the material in Chapter 11 on the candidate systems matrix. What ate the strengths of each? Utilize them together to consider three potential systems
Assume you are the now a systems analyst on the project described in the preceding question. Executive management was extremely impressed by your work on the problem statement. As a result, they have
Your strong work on the project to date has continued to impress executive management. You have received a pay increase and have been tasked with conducting the requirements analysis phase.
Using your answer to the previous problem, draw a use-case diagram of the school registration system.Data From Previous Problem:-During what part of the development life cycle are use cases first
Define the real meaning of anxiety. What are the different meanings of this word?
Is the word anxiety a candidate for creating a stable pattern? If so, give reasons.
What is the main business theme (EBT) for anxiety?
Can you list different applications of the word anxiety?
Do you agree to the suggestion that anxiety pattern is applicable to all domains where it plays a major role?
Identify different BOs for this pattern. Provide a brief explanation for each one of them.

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