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computer science
systems analysis and design 12th

Questions and Answers of Systems Analysis And Design 12th

Consider a uniformly doped \(\mathrm{GaAs}\) pn junction with doping concentrations of \(N_{a}=5 \times 10^{18} \mathrm{~cm}^{-3}\) and \(N_{d}=5 \times 10^{16} \mathrm{~cm}^{-3}\). Plot the built-in
The zero-biased junction capacitance of a silicon pn junction is \(C_{j o}=0.4 \mathrm{pF}\). The doping concentrations are \(N_{a}=1.5 \times 10^{16} \mathrm{~cm}^{-3}\) and \(N_{d}=4 \times 10^{15}
The zero-bias capacitance of a silicon pn junction diode is \(C_{j o}=0.02 \mathrm{pF}\) and the built-in potential is \(V_{b i}=0.80 \mathrm{~V}\). The diode is reverse biased through a
The doping concentrations in a silicon pn junction are \(N_{d}=5 \times 10^{15} \mathrm{~cm}^{-3}\) and \(N_{a}=10^{17} \mathrm{~cm}^{-3}\). The zero-bias junction capacitance is \(C_{j o}=0.60
(a) At what reverse-bias voltage does the reverse-bias current in a silicon pn junction diode reach 90 percent of its saturation value? (b) What is the ratio of the current for a forward-bias voltage
(a) The reverse-saturation current of a pn junction diode is \(I_{S}=10^{-11} \mathrm{~A}\). Determine the diode voltage to produce currents of (i) \(10 \mu \mathrm{A}, 100 \mu \mathrm{A}\), \(1
Plot \(\log _{10} I_{D}\) versus \(V_{D}\) over the range \(0.1 \leq V_{D} \leq 0.7\mathrm{~V}\) for (a) \(I_{S}=\) \(10^{-12}\) and (b) \(I_{S}=10^{-14} \mathrm{~A}\).
A pn junction diode has \(I_{S}=2 \mathrm{nA}\). (a) Determine the diode voltage if (i) \(I_{D}=2 \mathrm{~A}\) and (ii) \(I_{D}=20 \mathrm{~A}\). (b) Determine the diode current if (i) \(V_{D}=0.4
(a) A germanium pn junction has a diode current of \(I_{D}=1.5 \mathrm{~mA}\) when biased at \(V_{D}=0.30 \mathrm{~V}\). What is the reverse-bias saturation current? (b) Using the results of part
The reverse-saturation current of a silicon pn junction diode at \(T=300 \mathrm{~K}\) is \(I_{S}=10^{-12} \mathrm{~A}\). Determine the temperature range over which \(I_{S}\) varies from \(0.5 \times
A pn junction diode is in series with a \(1 \mathrm{M} \Omega\) resistor and a \(2.8 \mathrm{~V}\) power supply. The reverse-saturation current of the diode is \(I_{S}=5 \times 10^{-11}
The diode in the circuit shown in Figure P1.40 has a reverse-saturation current of \(I_{S}=5 \times 10^{-13} \mathrm{~A}\). Determine the diode voltage and current.Figure P1.40:- + VPS= 1.2 V R = 50
(a) The reverse-saturation current of each diode in the circuit shown in Figure P1.42 is \(I_{S}=6 \times 10^{-14} \mathrm{~A}\). Determine the input voltage \(V_{I}\) required to produce an output
Consider the circuit shown in Figure P1.44. Determine the diode current \(I_{D}\) and diode voltage \(V_{D}\) for (a) \(V_{\gamma}=0.6 \mathrm{~V}\) and (b) \(V_{\gamma}=0.7 \mathrm{~V}\).Figure
The cut-in voltage of the diode shown in the circuit in Figure P1.46 is \(V_{\gamma}=0.7 \mathrm{~V}\). The diode is to remain biased "on" for a power supply voltage in the range \(5 \leq V_{P S}
Repeat Problem 1.47 if the reverse-saturation current for each diode is \(I_{S}=5 \times 10^{-14} \mathrm{~A}\). What is the voltage across each diode?Data From Problem 1.47:-Find \(I\) and \(V_{O}\)
Assume each diode in the circuit shown in Figure P1.50 has a cut-in voltage of \(V_{\gamma}=0.65 \mathrm{~V}\). (a) The input voltage is \(V_{I}=5 \mathrm{~V}\). Determine the value of \(R_{1}\)
Determine the small-signal diffusion resistance \(r_{d}\) for a diode biased at (a) \(I_{D}=26 \mu \mathrm{A}\), (b) \(I_{D}=260 \mu \mathrm{A}\), and (c) \(I_{D}=2.6 \mathrm{~mA}\).
The forward-bias currents in a pn junction diode and a Schottky diode are \(0.72 \mathrm{~mA}\). The reverse-saturation currents are \(I_{S}=5 \times 10^{-13} \mathrm{~A}\) and \(I_{S}=5 \times
The reverse-saturation currents of a Schottky diode and a pn junction diode are \(I_{S}=5 \times 10^{-8} \mathrm{~A}\) and \(10^{-12} \mathrm{~A}\), respectively.(a) The diodes are connected in
(a) The Zener diode in Figure P1.57 is ideal with \(V_{Z}=6.8\) V. Determine the maximum current and maximum power dissipated in the diode \(\left(R_{L}=\infty\right)\). (b) Determine the value of
The output current of a pn junction diode used as a solar cell can be given by\[I_{D}=0.2-5 \times 10^{-14}\left[\exp \left(\frac{V_{D}}{V_{T}}\right)-1\right] \quad \mathrm{A}\]The short-circuit
Using the current-voltage characteristics of the solar cell described in Problem 1.60, plot \(I_{D}\) versus \(V_{D}\).Data From Problem 1.60:-The output current of a pn junction diode used as a
(a) Using the current-voltage characteristics of the solar cell described in problem 1.60, determine \(V_{D}\) when \(I_{D}=0.8 I_{S C}\). (b) Using the results of part (a), determine the power
Use a computer simulation to generate the ideal current-voltage characteristics of a diode from a reverse-bias voltage of \(5 \mathrm{~V}\) to a forward-bias current of \(1 \mathrm{~mA}\), for an
Use a computer simulation to find the diode current and voltage for the circuit described in Problem 1.38.Data From Problem 1.38:-A pn junction diode is in series with a \(1 \mathrm{M} \Omega\)
The reverse-saturation current for each diode in Figure P1.42 is \(I_{S}=10^{-14} \mathrm{~A}\). Use a computer simulation to plot the output voltage \(V_{O}\) versus the input voltage \(V_{I}\) over
Use a computer simulation to find the diode current, diode voltage, and output voltage for each circuit shown in Figure P1.47. Assume \(I_{S}=10^{-13} \mathrm{~A}\) for each diode.Figure P1.47:- +5 V
Design a diode circuit to produce the load line and \(Q\)-point shown in Figure P1.67. Assume diode piecewise linear parameters of \(V_{\gamma}=0.7 \mathrm{~V}\) and \(r_{f}=0\). in (mA) 2.4 Q-point
Design a circuit to produce the characteristics shown in Figure P1.68, where \(i_{D}\) is the diode current and \(v_{I}\) is the input voltage. Assume diode piecewise linear parameters of
Design a circuit to produce the characteristics shown in Figure P1.69, where \(v_{O}\) is the output voltage and \(v_{I}\) is the input voltage. Assume diode piecewise linear parameters of
Design a circuit to produce the characteristics shown in Figure P1.70, where \(v_{O}\) is the output voltage and \(v_{I}\) is the input voltage. Assume diode piecewise linear parameters of
What characteristic of a diode is used in the design of diode signal processing circuits?
Describe a simple half-wave diode rectifier circuit and sketch the output voltage versus time.
Describe a simple full-wave diode rectifier circuit and sketch the output voltage versus time.
What is the advantage of connecting an \(R C\) filter to the output of a diode rectifier circuit?
Define ripple voltage. How can the magnitude of the ripple voltage be reduced?
Describe a simple Zener diode voltage reference circuit.
What effect does the Zener diode resistance have on the voltage reference circuit operation? Define load regulation.
What are the general characteristics of diode clipper circuits?
Describe a simple diode clipper circuit that limits the negative portion of a sinusoidal input voltage to a specified value.
What are the general characteristics of diode clamper circuits?
What one circuit element, besides a diode, is present in all diode clamper circuits?
Describe the procedure used in the analysis of a circuit containing two diodes. How many initial assumptions concerning the state of the circuit are possible?
Describe a diode OR logic circuit. Compare a logic 1 value at the output compared to a logic 1 value at the input. Are they the same value?
Describe a diode AND logic circuit. Compare a logic 0 value at the output compared to a logic 0 value at the input. Are they the same value?
Describe a simple circuit that can be used to turn an LED on or off with a high or low input voltage.
Consider the circuit shown in Figure P2.1. Let \(R=1 \mathrm{k} \Omega, V_{\gamma}=0.6 \mathrm{~V}\), and \(r_{f}=20 \Omega\). (a) Plot the voltage transfer characteristics \(v_{O}\) versus \(v_{I}\)
For the circuit shown in Figure P2.1, show that for \(v_{I} \geq 0\), the output voltage is approximately given byFigure P2.1 \(v_{O}=v_{I}-V_{T} \ln \left(\frac{v_{O}}{I_{S} R}\right)\) + D ww + R
A half-wave rectifier such as shown in Figure 2.2 (a) has a \(2 \mathrm{k} \Omega\) load. The input is a \(120 \mathrm{~V}(\mathrm{rms}), 60 \mathrm{~Hz}\) signal and the transformer is a 10:1
Consider the battery charging circuit shown in Figure 2.4(a). Assume that \(V_{B}=9 \mathrm{~V}, V_{S}=15 \mathrm{~V}\), and \(\omega=2 \pi(60)\). (a) Determine the value of \(R\) such that the
Figure P2.5 shows a simple full-wave battery charging circuit. Assume \(V_{B}=9 \mathrm{~V}, V_{\gamma}=0.7 \mathrm{~V}\), and \(v_{S}=15 \sin [2 \pi(60) t]\) (V). (a) Determine \(R\) such that the
The full-wave rectifier circuit shown in Figure 2.5 (a) in the text is to deliver \(0.2 \mathrm{~A}\) and \(12 \mathrm{~V}\) (peak values) to a load. The ripple voltage is to be limited to \(0.25
The input signal voltage to the full-wave rectifier circuit in Figure 2.6 (a) in the text is \(v_{I}=160 \sin [2 \pi(60) t] \mathrm{V}\). Assume \(V_{\gamma}=0.7 \mathrm{~V}\) for each diode.
The output resistance of the full-wave rectifier in Figure 2.6(a) in the text is \(R=150 \Omega\). A filter capacitor is connected in parallel with \(R\). Assume \(V_{\gamma}=0.7 \mathrm{~V}\). The
Repeat Problem 2.8 for the half-wave rectifier in Figure 2.2(a).Data From Problem 2.8:-The output resistance of the full-wave rectifier in Figure 2.6 (a) in the text is \(R=150 \Omega\). A filter
Consider the half-wave rectifier circuit shown in Figure 2.8 (a) in the text. Assume \(v_{S}=10 \sin [2 \pi(60) t](\mathrm{V}), V_{\gamma}=0.7 \mathrm{~V}\), and \(R=500 \Omega\).(a) What is the peak
The full-wave rectifier circuit shown in Figure P2.12 has an input signal whose frequency is \(60 \mathrm{~Hz}\). The rms value of \(v_{S}=8.5 \mathrm{~V}\). Assume each diode cut-in voltage is
Consider the full-wave rectifier circuit in Figure 2.7 of the text. The output resistance is \(R_{L}=125 \Omega\), each diode cut-in voltage is \(V_{\gamma}=0.7 \mathrm{~V}\), and the frequency of
The circuit in Figure P2.14 is a complementary output rectifier. If \(v_{s}=26\) \(\sin [2 \pi(60) t] \mathrm{V}\), sketch the output waveforms \(v_{o}^{+}\)and \(v_{o}^{-}\)versus time, assuming
A full-wave rectifier is to be designed using the center-tapped transformer configuration. The peak output voltage is to be \(12 \mathrm{~V}\), the nominal load current is to be \(0.5 \mathrm{~A}\),
A full-wave rectifier is to be designed using the bridge circuit configuration. The peak output voltage is to be \(9 \mathrm{~V}\), the nominal load current is to be 100 \(\mathrm{mA}\), and the
(a) Sketch \(v_{o}\) versus time for the circuit in Figure P2.18. The input is a sine wave given by \(v_{i}=10 \sin \omega t \mathrm{~V}\). Assume \(V_{\gamma}=0\). (b) Determine the rms value of the
Consider the Zener diode circuit shown in Figure P2.20. Assume \(V_{Z}=12 \mathrm{~V}\) and \(r_{z}=0\). (a) Calculate the Zener diode current and the power dissipated in the Zener diode for
In the voltage regulator circuit in Figure P2.21, \(V_{I}=20 \mathrm{~V}, V_{Z}=10 \mathrm{~V}\), \(R_{i}=222 \Omega\), and \(P_{Z}(\max )=400 \mathrm{~mW}\).(a) Determine \(I_{L}, I_{Z}\), and
Consider the Zener diode circuit in Figure 2.19 in the text. Assume parameter values of \(V_{Z O}=5.6 \mathrm{~V}\) (diode voltage when \(I_{Z} \cong 0\) ), \(r_{z}=3 \Omega\), and \(R_{i}=50
Design a voltage regulator circuit such as shown in Figure P2.21 so that \(V_{L}=7.5 \mathrm{~V}\). The Zener diode voltage is \(V_{Z}=7.5 \mathrm{~V}\) at \(I_{Z}=10 \mathrm{~mA}\). The incremental
The percent regulation of the Zener diode regulator shown in Figure 2.16 is 5 percent. The Zener voltage is \(V_{Z O}=6 \mathrm{~V}\) and the Zener resistance is \(r_{z}=3 \Omega\). Also, the load
Consider the circuit in Figure P2.28. Let \(V_{\gamma}=0\). The secondary voltage is given by \(v_{s}=V_{s} \sin \omega t\), where \(V_{s}=24 \mathrm{~V}\). The Zener diode has parameters \(V_{Z}=16
The parameters in the circuit shown in Figure P2.30 are \(V_{\gamma}=0.7 \mathrm{~V}\), \(V_{Z 1}=2.3 \mathrm{~V}\), and \(V_{Z 2}=5.6 \mathrm{~V}\). Plot \(v_{O}\) versus \(v_{I}\) over the range of
For the circuit in Figure P2.32,(a) plot \(v_{O}\) versus \(v_{I}\) for \(0 \leq v_{I} \leq 15 \mathrm{~V}\). Assume \(V_{\gamma}=0.7 \mathrm{~V}\). Indicate all breakpoints.(b) Plot \(i_{D}\) over
The diode in the circuit of Figure P2.34 (a) has piecewise linear parameters \(V_{\gamma}=0.7 \mathrm{~V}\) and \(r_{f}=10 \Omega\).(a) Plot \(v_{O}\) versus \(v_{I}\) for \(-30 \leq v_{I} \leq 30
Plot \(v_{O}\) for each circuit in Figure P2.36 for the input shown. Assume (a) \(V_{\gamma}=0\) and (b) \(V_{\gamma}=0.6 \mathrm{~V}\). 20V 0 + Figure P2.36 (a) 2V+ 10k2 + Vo y 2.2 k2 ww (b)
A car's radio may be subjected to voltage spikes induced by coupling from the ignition system. Pulses on the order of \(\pm 250 \mathrm{~V}\) and lasting for \(120 \mu \mathrm{s}\) may exist. Design
For the circuit in Figure P2.39(b), let \(V_{\gamma}=0\) and \(v_{I}=10 \sin \omega t(\mathrm{~V})\). Plot \(v_{O}\) versus time over three cycles of input voltage. Assume the initial voltage across
The diodes in the circuit in Figure P2.44 have piecewise linear parameters of \(V_{\gamma}=0.6 \mathrm{~V}\) and \(r_{f}=0\). Determine the output voltage \(V_{O}\) and the diode currents \(I_{D 1}\)
The diodes in the circuit in Figure P2.46 have the same piecewise linear parameters as described in Problem 2.44. Determine the output voltage \(V_{O}\) and the currents \(I_{D 1}, I_{D 2}, I_{D
The diode cut-in voltage for each diode in the circuit shown in Figure P2.48 is \(0.7 \mathrm{~V}\). Determine the value of \(R\) such that (a) \(I_{D 1}=I_{D 2}\), (b) \(I_{D 1}=0.2 I_{D 2}\), and
In each circuit shown in Figure P2.50, the diode cut-in voltage is \(V_{\gamma}=0.6 \mathrm{~V}\).(a) For the circuit in Figure P2.50(a), determine \(v_{O}\) for (i) \(v_{I}=+5 \mathrm{~V}\) and (ii)
The cut-in voltage of each diode in the circuit shown in Figure P2.52 is \(V_{\gamma}=0.7 \mathrm{~V}\). Determine \(I_{D 1}, I_{D 2}, I_{D 3}\), and \(V_{A}\) for (a) \(R_{3}=14 \mathrm{k} \Omega\),
Let \(V_{\gamma}=0.7 \mathrm{~V}\) for each diode in the circuit in Figure P2.53.(a) Find \(I_{D 1}\) and \(V_{O}\) for \(R_{1}=5 \mathrm{k} \Omega\) and \(R_{2}=10 \mathrm{k} \Omega\).(b) Repeat
For the circuit shown in Figure P2.54, let \(V_{\gamma}=0.7 \mathrm{~V}\) for each diode. Calculate \(I_{D 1}\) and \(V_{O}\) for (a) \(R_{1}=10 \mathrm{k} \Omega, R_{2}=5 \mathrm{k} \Omega\) and for
If \(V_{\gamma}=0.7 \mathrm{~V}\) for the diode in the circuit in Figure P2.56 determine \(I_{D}\) and \(V_{O}\). +15 ww 10 -o Vo 20 20 Figure P2.56
Let \(V_{\gamma}=0.7 \mathrm{~V}\) for the diode in the circuit in Figure P2.57. Determine \(I_{D}\), \(V_{D}, V_{A}\), and \(V_{B}\) for (a) \(V_{1}=V_{2}=6 \mathrm{~V}\); (b) \(V_{1}=2 \mathrm{~V},
(a) Each diode in the circuit in Figure P2.58 has piecewise linear parameters of \(V_{\gamma}=0\) and \(r_{f}=0\). Plot \(v_{O}\) versus \(v_{I}\) for \(0 \leq v_{I} \leq 30 \mathrm{~V}\). Indicate
Let \(V_{\gamma}=0.7 \mathrm{~V}\) for each diode in the circuit shown in Figure P2.60. Plot \(I_{D 2}\) versus \(v_{I}\) over the range \(0 \leq v_{I} \leq 12 \mathrm{~V}\) for (a) \(V_{B}=4.5
Consider the circuit in Figure P2.62. The output of a diode AND logic gate is connected to the input of a second diode AND logic gate. Assume \(V_{\gamma}=\) \(0.6 \mathrm{~V}\) for each diode.
Consider the circuit shown in Figure P2.64. The forward-bias cut-in voltage of the diode is \(1.5 \mathrm{~V}\) and the forward-bias resistance is \(r_{f}=10 \Omega\). Determine the value of \(R\)
The parameters of \(D_{1}\) and \(D_{2}\) in the circuit shown in Figure P2.66 are \(V_{\gamma}=1.7 \mathrm{~V}\) and \(r_{f}=20 \Omega\). The current in each diode is to be limited to \(I_{D}=15
If the resistor in Example 2.12 is \(R=2 \mathrm{k} \Omega\) and the diode is to be reverse biased by at least \(1 \mathrm{~V}\), determine the minimum power supply voltage required.Data From Example
Consider the photodiode circuit shown in Figure 2.44. Assume the quantum efficiency is 1 . A photocurrent of \(0.6 \mathrm{~mA}\) is required for an incident photon flux of \(\Phi=10^{17}
Consider the voltage doubler circuit in Figure 2.14. Assume a \(60 \mathrm{~Hz}\), \(120 \mathrm{~V}\) (rms) signal is applied at the input of the transformer with a \(20: 1\) turns ratio. Let \(R=10
Consider the parameters and results of Example 2.2. Use a computer simulation to plot the output voltage of each rectifier over four cycles of input voltage. Also determine the PIV of each diode. How
(a) Using a computer simulation, verify the results of Exercise TYU 2.3.(b) Determine the ripple voltage if a filter capacitance of \(C=50 \mu \mathrm{F}\) is connected in parallel with the load
(a) Using a computer simulation, determine each diode current and voltage in the circuit shown in Figure 2.40.(b) Repeat part (a) using the circuit parameters given in Exercise 2.11.Figure 2.40:-Data
Consider the full-wave bridge rectifier circuit. The input signal is \(120 \mathrm{~V}\) (rms) at \(60 \mathrm{~Hz}\). The load resistance is \(R_{L}=250 \Omega\). The peak output voltage is to be
Design a simple dc voltage source using a \(120 \mathrm{~V}(\mathrm{rms}), 60 \mathrm{~Hz}\) input signal to a nominal \(10 \mathrm{~V}\) output signal. A Zener diode with parameters \(V_{Z O}=10
A clipper is to be designed such that \(v_{O}=2.5 \mathrm{~V}\) for \(v_{I} \geq 2.5\mathrm{~V}\) and \(v_{O}=-1.25 \mathrm{~V}\) for \(v_{I} \leq-1.25 \mathrm{~V}\).
Design a circuit to provide the voltage transfer characteristics shown in Figure P2.76. Use diodes and Zener diodes with appropriate breakdown voltages in the design. The maximum current in the
Describe the basic structure and operation of a MOSFET. Define enhancement mode and depletion mode.

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