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computer science
systems analysis and design 12th

Microelectronics Circuit Analysis And Design 4th Edition Donald A. Neamen - Solutions

Repeat Problem 10.62 for the modified Wilson current mirror in Figure 10.20(b).Data From Problem 10.62:-A Wilson current mirror is shown in Figure 10.20(a). The parameters are: \(V^{+}=5 \mathrm{~V}, V^{-}=-5 \mathrm{~V}\), and \(I_{\text {REF }}=80 \mu \mathrm{A}\). The transistor parameters are:
Consider the circuit in Figure 10.21 in the text. Assume \(I_{\mathrm{REF}}=50 \mu \mathrm{A}\) and assume transistor parameters of \(V_{T N}=0.8 \mathrm{~V},\left(\frac{1}{2}\right) \mu_{n} C_{\mathrm{ox}}=48 \mu \mathrm{A} / \mathrm{V}^{2}\), \(\lambda=0\), and \(\gamma=0\). (a) Find \(W / L\)
Consider the bias-independent current source in Figure 10.22. Assume transistor parameters of \(V_{T N}=+0.5 \mathrm{~V}, V_{T P}=-0.5 \mathrm{~V},\left(\frac{1}{2}\right) \mu_{n} C_{\mathrm{ox}}=\) \(50 \mu \mathrm{A} / \mathrm{V}^{2},\left(\frac{1}{2}\right) \mu_{p} C_{\mathrm{ox}}=20 \mu
Consider the multitransistor current source in Figure P10.66. The transistor parameters are \(V_{T N}=0.7 \mathrm{~V}, k_{n}^{\prime}=80 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(\lambda=0\). Assume \(M_{3}\), \(M_{4}\), and \(M_{5}\) are identical. Design the circuit such that
Consider the circuit shown in Figure P10.67. The transistor parameters are \(V_{T N}=0.4 \mathrm{~V}, k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(\lambda=0\). Design the \((W / L)\) ratios of the transistors such that the total power dissipated in the circuit is \(5 \mathrm{~mW}\)
The parameters of the transistors in the circuit in Figure P10.68 are \(V_{T N}=0.8 \mathrm{~V}, V_{T P}=-0.8 \mathrm{~V}, k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, k_{p}^{\prime}=60 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(\lambda_{n}=\lambda_{p}=0\). The transistor \((W / L)\) ratios
Repeat Problem 10.68 if the bias voltages are changed to \(V^{+}=5 \mathrm{~V}\) and \(V^{-}=-5 \mathrm{~V}\).Data From Problem 10.68:-The parameters of the transistors in the circuit in Figure P10.68 are \(V_{T N}=0.8 \mathrm{~V}, V_{T P}=-0.8 \mathrm{~V}, k_{n}^{\prime}=100 \mu \mathrm{A} /
Consider the circuit shown in Figure P10.70. The NMOS transistor parameters are \(V_{T N}=0.4 \mathrm{~V}, k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, \lambda_{n}=0\) and the PMOS transistor parameters are \(V_{T P}=-0.6 \mathrm{~V}, k_{p}^{\prime}=40 \mu \mathrm{A} / \mathrm{V}^{2},
For the circuit shown in Figure P10.70, \(I_{\text {REF }}=100 \mu \mathrm{A}\). The transistor parameters are \(V_{T N}=0.4 \mathrm{~V}, V_{T P}=-0.4 \mathrm{~V}, k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, k_{p}^{\prime}=\) \(60 \mu \mathrm{A} / \mathrm{V}^{2}\), and
The parameters of the NMOS transistors in the circuit in Figure P10.72 are \(V_{T N}=0.4 \mathrm{~V}, k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, \lambda_{n}=0\) and the parameters of the PMOS transistors in the circuit are \(V_{T P}=-0.6 \mathrm{~V}, k_{p}^{\prime}=40 \mu \mathrm{A} /
For the JFET in Figure P10.73, the parameters are: \(I_{D S S}=2 \mathrm{~mA}, V_{P}=\) \(-2 \mathrm{~V}\), and \(\lambda=0.05 \mathrm{~V}^{-1}\). Determine \(I_{O}\) for: (a) \(V_{D}=-5 \mathrm{~V}\), (b) \(V_{D}=0 \mathrm{~V}\), and (c) \(V_{D}=+5 \mathrm{~V}\). VD -10 V Figure P10.73
A JFET circuit is biased with the current source in Figure P10.74. The transistor parameters are: \(I_{D S S}=4 \mathrm{~mA}, V_{P}=-4 \mathrm{~V}\), and \(\lambda=0\). Design the circuit such that \(I_{O}=2 \mathrm{~mA}\). What is the minimum value of \(V_{D}\) such that the transistor is biased
Consider the circuit shown in Figure P10.75. The transistor parameters are \(I_{S 1}=5 \times 10^{-16} \mathrm{~A}, I_{S 2}=10^{-15} \mathrm{~A}, \beta_{1}=180, \beta_{2}=120, V_{A 1}=120 \mathrm{~V}\), and \(V_{A 2}=80 \mathrm{~V}\). The \(Q\)-point is \(V_{O}=1.25 \mathrm{~V}\) and \(I_{C Q}=200
For the circuit shown in Figure P10.76, the transistor parameters are \(V_{T N}=0.5 \mathrm{~V}, V_{T P}=-0.5 \mathrm{~V}, k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, k_{p}^{\prime}=60 \mu \mathrm{A} / \mathrm{V}^{2}, \lambda_{1}=\) \(0.02 \mathrm{~V}^{-1}\), and \(\lambda_{2}=0.03
Consider the simple BJT active load amplifier in Figure 10.29, with transistor parameters: \(I_{S O}=10^{-12} \mathrm{~A}, I_{S 1}=I_{S 2}=5 \times 10^{-13} \mathrm{~A}, V_{A N}=120 \mathrm{~V}\), and \(V_{A P}=80 \mathrm{~V}\). Let \(V^{+}=5 \mathrm{~V}\), and neglect base currents. (a) Find the
The amplifier shown in Figure P10.78 uses a pnp driver and an npn active load circuit. The transistor parameters are: \(I_{S 0}=5 \times 10^{-13} \mathrm{~A}, I_{S 1}=I_{S 2}=\) \(10^{-12} \mathrm{~A}, V_{A N}=120 \mathrm{~V}\), and \(V_{A P}=80 \mathrm{~V}\). Let \(V^{+}=5 \mathrm{~V}\), and
The bias voltage of the MOSFET amplifier with active load in Figure \(\mathrm{P} 10.79\) is changed to \(V^{+}=3 \mathrm{~V}\). The transistor parameters are \(V_{T N}=\) \(0.5 \mathrm{~V}, V_{T P}=-0.5 \mathrm{~V}, k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, k_{p}^{\prime}=60 \mu
The simple MOSFET amplifier with active load shown in Figure 10.33 is biased at \(V^{+}=3 \mathrm{~V}\). The reference current is \(I_{\mathrm{REF}}=80 \mu \mathrm{A}\). The transistor parameters are \(V_{T N}=0.5 \mathrm{~V}, V_{T P}=-0.5 \mathrm{~V}, K_{n}=K_{p}=0.1 \mathrm{~mA}\), and
Consider the circuit shown in Figure 10.37(a). Let \(V^{+}=3 \mathrm{~V}\) and \(R_{1}=\) \(47 \mathrm{k} \Omega\). The transistors \(Q_{1}\) and \(Q_{2}\) are matched with \(V_{E B}(\mathrm{on})=0.6 \mathrm{~V}\). Neglect base currents, and assume \(V_{A P}=90 \mathrm{~V}\) and \(V_{A N}=120
Again consider the circuit shown in Figure 10.37(a). Let \(V^{+}=5 \mathrm{~V}\) and \(R_{1}=35 \mathrm{k} \Omega\). Let \(V_{E B 1}\) (on) \(=0.6 \mathrm{~V}\). Neglect dc base currents. The baseemitter area of \(Q_{2}\) is twice that of \(Q_{1}\). The Early voltages are \(V_{A N}=120
A BJT amplifier with active load is shown in Figure P10.83. The circuit contains emitter resistors \(R_{E}\) and a load resistor \(R_{L}\). (a) Derive the expression for the output resistance looking into the collector of \(Q_{2}\). (b) Using the small-signal equivalent circuit, derive the equation
In the circuit in Figure P10.84, the active load circuit is replaced by a Wilson current source. Assume that \(\beta=80\) for all transistors, and that \(V_{A N}=120 \mathrm{~V}, V_{A P}=80 \mathrm{~V}\), and \(I_{\mathrm{REF}}=0.2 \mathrm{~mA}\). Determine the opencircuit small-signal voltage
For the circuit in Figure 10.40(a), the transistor parameters are \(k_{n}^{\prime}=\) \(80 \mu \mathrm{A} / \mathrm{V}^{2}, k_{p}^{\prime}=40 \mu \mathrm{A} / \mathrm{V}^{2}, V_{T N}=0.8 \mathrm{~V}, V_{T P}=-0.6 \mathrm{~V}, \lambda_{n}=0.015 \mathrm{~V}^{-1}\), and \(\lambda_{p}=0.02
Consider the circuit in Figure 10.40(a). The transistor and circuit parameters are the same as given in Problem 10.85 except for the width-to-length ratios of the transistors. Determine the \(W / L\) ratios such that the open-circuit small-signal voltage gain is \(A_{v}=-100\). Also let the dc
The parameters of the transistors in Figure P10.87 are \(V_{T N}=0.6 \mathrm{~V}\), \(V_{T P}=-0.6 \mathrm{~V}, \quad k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, \quad k_{p}^{\prime}=60 \mu \mathrm{A} / \mathrm{V}^{2}, \quad\) and \(\lambda_{n}=\lambda_{p}=\) \(0.02 \mathrm{~V}^{-1}\). The
The parameters of the transistors in Figure P10.88 are \(V_{T N}=0.6 \mathrm{~V}\), \(V_{T P}=-0.6 \mathrm{~V}, \quad k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, \quad k_{p}^{\prime}=60 \mu \mathrm{A} / \mathrm{V}^{2}, \quad\) and \(\quad \lambda_{n}=\lambda_{p}=\) \(0.04
A BJT cascode amplifier with a cascode active load is shown in Figure P10.89. Assume transistor parameters of \(\beta=120\) and \(V_{A}=80 \mathrm{~V}\). The \(V_{B B}\) voltage is such that all transistors are biased in the active region. Determine the small-signal voltage gain \(A_{v}=v_{o} /
Design a bipolar cascode amplifier with a cascode active load similar to that in Figure P10.89 except the amplifying transistors are to be pnp and the load transistors are to be npn. Bias the circuit at \(V^{+}=10 \mathrm{~V}\) and incorporate a reference current of \(I_{\mathrm{REF}}=200 \mu
Design a MOSFET cascode amplifier with a cascode active load similar to that shown in Figure P10.88 except that the amplifying transistors are to be PMOS and the load transistors are to be NMOS. Assume transistor parameters similar to those in Problem 10.88. Determine the small-signal voltage gain.
Consider the Widlar current source in Figure 10.9, with parameters given in Example 10.5. Choose appropriate transistor parameters. Connect a \(50 \mathrm{k} \Omega\) resistor between \(V^{+}\)and the collector of \(Q_{2}\) as a load. Using a computer simulation, determine \(I_{\mathrm{REF}},
Using a computer simulation, verify the results of Example 10.9.Figure 10.17:- Compare the output resistance of the cascode MOSFET current source to that of the two-transistor current source. Consider the two-transistor current source in Figure 10.17 and the cascode current source in Figure 10.18.
Using a computer simulation, verify the results of Example 10.12. In each case, plot \(v_{O}\) versus \(v_{I}\) over the range \(0 \leq v_{I} \leq 1.0 \mathrm{~V}\).Data From Example 10.12:-Figure 10.37(a):- Calculate the small-signal voltage gain of an amplifier with an active load and a load
Using a computer simulation, verify the results of Problem 10.87.Data From Problem 10.87:-The parameters of the transistors in Figure P10.87 are \(V_{T N}=0.6 \mathrm{~V}\), \(V_{T P}=-0.6 \mathrm{~V}, \quad k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, \quad k_{p}^{\prime}=60 \mu \mathrm{A}
Design a generalized Widlar current source (Figure P10.34) to provide a bias current of \(I_{O}=100 \mu \mathrm{A}\) and an output resistance of \(R_{o}=10 \mathrm{M} \Omega\). The circuit is to be biased at \(V^{+}=3 \mathrm{~V}\) and \(V^{-}=-3 \mathrm{~V}\). The transistor parameters are
The current source to be designed has the general configuration shown in Figure 10.17. The bias voltages are \(V^{+}=2.5 \mathrm{~V}\) and \(V^{-}=-2.5 \mathrm{~V}\). The bias current is to be \(I_{O}=80 \mu \mathrm{A}\) and \(V_{D S 2}(\mathrm{sat})=0.5 \mathrm{~V}\). The total power dissipated in
Design a PMOS version of the current source circuit shown in Figure 10.27. The circuit is to be biased at \(V^{+}=2.5 \mathrm{~V}\) and \(V^{-}=2.5 \mathrm{~V}\). The currents are to be \(I_{O}=0.6 \mathrm{~mA}\) and \(I_{\mathrm{REF}}=0.25 \mathrm{~mA}\). Use appropriate transistor parameters. V+=
Consider Exercise TYU 10.10. Redesign the circuit such that the small signal voltage gain is \(A_{v}=-120\).Data From Exercise TYU 10.10:-Figure 10.33:- TYU 10.10 Consider the simple MOSFET amplifier with active load in Figure 10.33. The transistor parameters are VTN = 0.7 V, VTP = 0.7 V, K = Kp =
Define differential-mode and common-mode input voltages.
Sketch the dc transfer characteristics of a BJT differential amplifier.
From the dc transfer characteristics, qualitatively define the linear region of operation for a differential amplifier.
What is meant by matched transistors and why are matched transistors important in the design of diff-amps?
Explain how a differential-mode output signal is generated.
Explain how a common-mode output signal is generated.
Define the common-mode rejection ratio, CMRR. What is the ideal value?
What design criteria will yield a large value of CMRR in an emitter-coupled pair?
Sketch the differential-mode and common-mode half-circuit models for an emitter-coupled diff-amp.
Define differential-mode and common-mode input resistances.
Sketch the dc transfer characteristics of a MOSFET differential amplifier.
Sketch and describe the advantages of a MOSFET cascode current source used with a MOSFET differential amplifier.
Sketch a simple MOSFET differential amplifier with an active load.
Explain the advantages of an active load.
Describe the loading effects of connecting a second stage to the output of a BJT diff-amp.
Explain the frequency response of the differential-mode voltage gain.
Sketch a BJT Darlington pair circuit and explain the advantages.
Describe the three stages of a simple BJT operational amplifier.
Discuss the limiting factors for the maximum rated current and maximum rated voltage in a BJT and MOSFET.
Describe the safe operating area for a transistor.
Why is an interdigitated structure typically used in a high-power BJT design?
Discuss the role of thermal resistance between various junctions in a high-power transistor structure.
Define and describe the power derating curve for a transistor.
Define power conversion efficiency for an output stage.
Describe the operation of a class-A output stage.
Describe the operation of an ideal class-B output stage.
Discuss crossover distortion.
What is meant by harmonic distortion?
Describe the operation of a class-AB output stage and why a class-AB output stage is important.
Describe the operation of a transformer-coupled class-A common-emitter amplifier.
Sketch a class-AB complementary BJT push-pull output stage using a \(V_{B E}\) multiplier circuit.
Sketch a class-AB complementary MOSFET push-pull output stage using all MOSFETs.
What are the advantages of a Darlington pair configuration?
Sketch a two-transistor configuration using npn and pnp BJTs that are equivalent to a single pnp BJT.
The maximum current, voltage, and power ratings of a power MOSFET are \(4 \mathrm{~A}, 40 \mathrm{~V}\), and \(30 \mathrm{~W}\), respectively. (a) Sketch and label the safe operating area for this transistor, using linear current and voltage scales. (b) For the common-source circuit shown in Figure
The common-emitter circuit in Figure P8.2 is biased at \(V_{C C}=24 \mathrm{~V}\). The maximum transistor power is rated at \(P_{Q, \max }=25 \mathrm{~W}\). The other parameters of the transistor are \(\beta=60\) and \(V_{B E}(\) on \()=0.7 \mathrm{~V}\). (a) Determine \(R_{L}\) and \(R_{B}\) such
For the transistor in the common-emitter circuit in Figure P8.2, the parameters are: \(\beta=80, P_{D, \max }=10 \mathrm{~W}, V_{C E(\text { sus) }}=30 \mathrm{~V}\), and \(I_{C, \max }=1.2 \mathrm{~A}\).(a) Design the values of \(R_{L}\) and \(R_{B}\) for \(V_{C C}=30 \mathrm{~V}\). What is
Sketch the safe operating region for a MOSFET. Label three arbitrary points on the maximum hyperbola. Assume each of the labeled points is a \(Q\)-point and draw a tangent load line through each point. Discuss the advantages or disadvantages of each point relative to the maximum possible signal
A power MOSFET is connected in a common-source configuration as shown in Figure P8.1. The parameters are: \(I_{D, \max }=4 \mathrm{~A}, V_{D S, \max }=50 \mathrm{~V}\), \(P_{D, \max }=35 \mathrm{~W}, V_{T N}=4 \mathrm{~V}\), and \(K_{n}=0.25 \mathrm{~A} / \mathrm{V}^{2}\). The circuit parameters
Consider the common-source circuit shown in Figure P8.6. The transistor parameters are \(V_{T N}=4 \mathrm{~V}\) and \(K_{n}=0.2 \mathrm{~A} / \mathrm{V}^{2}\). (a) Design the bias circuit such that the \(Q\)-point is in the center of the load line. (b) What is the power dissipated in the
A particular transistor is rated for a maximum power dissipation of \(60 \mathrm{~W}\) if the case temperature is at \(25^{\circ} \mathrm{C}\). Above \(25^{\circ} \mathrm{C}\), the allowed power dissipation is reduced by \(0.5 \mathrm{~W} /{ }^{\circ} \mathrm{C}\). (a) Sketch the power derating
A MOSFET has a rated power of \(50 \mathrm{~W}\) and a maximum specified junction temperature of \(150^{\circ} \mathrm{C}\). The ambient is \(T_{\mathrm{amb}}=25^{\circ} \mathrm{C}\). Find the relationship between the actual operating power and \(\theta_{\text {case-amb }}\).
For a power MOSFET, \(\theta_{\text {dev-case }}=1.5^{\circ} \mathrm{C} / \mathrm{W}, \theta_{\text {snk-amb }}=2.8^{\circ} \mathrm{C} / \mathrm{W}\), and \(\theta_{\text {case }-\mathrm{snk}}=0.6^{\circ} \mathrm{C} / \mathrm{W}\). The ambient temperature is \(25^{\circ} \mathrm{C}\). (a) If the
A power BJT must dissipate \(30 \mathrm{~W}\) of power. The maximum allowed junction temperature is \(T_{j, \max }=150^{\circ} \mathrm{C}\), the ambient temperature is \(25^{\circ} \mathrm{C}\), and the device-to-case thermal resistance is \(\theta_{\operatorname{dev}-\mathrm{case}}=2.8^{\circ}
The quiescent collector current in a BJT is \(I_{C Q}=3 \mathrm{~A}\). The maximum allowed junction temperature is \(T_{j, \max }=150^{\circ} \mathrm{C}\) and the ambient temperature is \(T_{\mathrm{amb}}=25^{\circ} \mathrm{C}\). Other parameters are \(\theta_{\text {snk-amb }}=3.8^{\circ}
For the class-A amplifier shown in Figure 8.16(a), show that the maximum theoretical conversion efficiency for a symmetrical square-wave input signal is 50 percent.Figure 8.16(a):- Vcc ic RL -O VO o + VI VCE (a)
Consider the emitter-follower amplifier shown in Figure P8.13.(a) Assuming \(\beta \gg 1\), show that the small-signal voltage gain can be written in the form \(A_{v}=\frac{I_{C} R_{L}}{I_{C} R_{L}+V_{T}}=\frac{R_{L}}{R_{L}+\frac{1}{g_{m}}}\)(b) If \(R_{L}=8 \Omega\), determine the minimum
Consider the emitter-follower amplifier shown in Figure P8.13. An average power of \(0.5 \mathrm{~W}\) is to be delivered to a load of \(R_{L}=8 \Omega\). (a) What are the peak values of ac output voltage and ac load current? (b) The minimum collector current occurs when \(V_{O}\) reaches the
Consider the emitter-follower amplifier in Figure P8.13. Since the base-emitter voltage is a function of collector current, the voltage gain changes as the collector current changes. This effect results in distortion of the output signal. Assume \(R_{L}=8 \Omega\) and \(I_{O}=0.25\) A. Defining the
Consider the class-A emitter-follower circuit shown in Figure P8.16. Assume all transistors are matched with \(V_{B E}(\mathrm{on})=0.7 \mathrm{~V}, V_{C E}(\mathrm{sat})=0.2 \mathrm{~V}\), and \(V_{A}=\infty\). Neglect base currents. Determine the maximum and minimum values of output voltage and
Consider the class-A source-follower circuit shown in Figure P8.17. The transistors are matched with parameters \(V_{T N}=0.5 \mathrm{~V}, K_{n}=12 \mathrm{~mA} / \mathrm{V}^{2}\), and\(\lambda=0\). Determine the maximum and minimum values of output voltage and the corresponding input voltages for
A class-A emitter follower biased with a constant current source is shown in Figure P8.16. Assume circuit parameters of \(V^{+}=12 \mathrm{~V}, V^{-}=-12 \mathrm{~V}\), and \(R_{L}=20 \Omega\). The transistor parameters are \(\beta=40\) and \(V_{B E}(\mathrm{on})=0.7 \mathrm{~V}\). The minimum
The circuit parameters for the class-A emitter follower shown in Figure P8.16 are \(V^{+}=24 \mathrm{~V}, V^{-}=-24 \mathrm{~V}\), and \(R_{L}=200 \Omega\). The transistor parameters are \(\beta=50, V_{B E}(\mathrm{on})=0.7 \mathrm{~V}\), and \(V_{C E}(\mathrm{sat})=0.2 \mathrm{~V}\). The output
Consider the BiCMOS follower circuit shown in Figure P8.20. The BJT transistor parameters are \(V_{B E}(\mathrm{on})=0.7 \mathrm{~V}, V_{C E}(\mathrm{sat})=0.2 \mathrm{~V}, V_{A}=\infty\), and the MOSFET parameters are \(V_{T N}=-1.8 \mathrm{~V}, K_{n}=12 \mathrm{~mA} / \mathrm{V}^{2}, \lambda=0\).
For the idealized class-B output stage in Figure 8.18 in the text, show that the maximum theoretical conversion efficiency for a symmetrical squarewave input signal is 100 percent.
Consider an idealized class-B output stage shown in Figure P8.22. (The effective turn-on voltages of devices A and B are zero, and the effective "saturation" voltages of \(v_{A}\) and \(v_{B}\) are zero.) Assume \(V^{+}=5 \mathrm{~V}\) and \(V^{-}=\) \(-5 \mathrm{~V}\). Assume a symmetrical sine
Consider an idealized class-B output stage shown in Figure P8.22. The output stage is to deliver \(50 \mathrm{~W}\) of average power to a \(24 \Omega\) load for a symmetrical input sine wave. Assume the supply voltages are \(\pm n\) volts, where \(n\) is an integer. (a) The power supply voltages
Consider the class-B output stage with complementary MOSFETs shown in Figure P8.24. The transistor parameters are \(V_{T N}=V_{T P}=0\) and \(K_{n}=K_{p}=\) \(0.4 \mathrm{~mA} / \mathrm{V}^{2}\). Let \(R_{L}=5 \mathrm{k} \Omega\). (a) Find the maximum output voltage such that \(M_{n}\) remains
For the class-B output stage shown in Figure P8.24, the bias voltages are \(V^{+}=12 \mathrm{~V}\) and \(V^{-}=-12 \mathrm{~V}\). The load resistance is \(R_{L}=50 \Omega\), and the transistor parameters are \(V_{T N}=V_{T P}=0\) and \(K_{n}=K_{p}=4 \mathrm{~mA} / \mathrm{V}^{2}\). (a) Plot
A simplified class-AB output stage with BJTs is shown in Figure 8.24. The circuit parameters are \(V_{C C}=5 \mathrm{~V}\) and \(R_{L}=1 \mathrm{k} \Omega\). For each transistor, \(I_{S}=2 \times 10^{-15} \mathrm{~A}\). (a) Determine the value of \(V_{B B}\) that produces \(i_{C n}=i_{C p}=1
A simplified class-AB output stage with enhancement-mode MOSFETs is shown in Figure 8.26. The circuit parameters are \(V_{D D}=12 \mathrm{~V}\) and \(R_{L}=1 \mathrm{k} \Omega\). The transistor parameters are \(V_{T N}=-V_{T P}=1.5 \mathrm{~V}\) and \(K_{n}=K_{p}=4 \mathrm{~mA} / \mathrm{V}^{2}\).
Consider the class-AB output stage in Figure P8.28. The diodes and transistors are matched, with parameters \(I_{S}=6 \times 10^{-12} \mathrm{~A}\), and \(\beta=40\). (a) Determine \(R_{1}\) such that the minimum current in the diodes is \(25 \mathrm{~mA}\) when \(v_{O}=24 \mathrm{~V}\). Find
An enhancement-mode MOSFET class-AB output stage is shown in Figure P8.29. The threshold voltage of each transistor is \(V_{T N}=-V_{T P}=1 \mathrm{~V}\) and the conduction parameters of the output transistors are \(K_{n 1}=K_{p 2}=\) \(5 \mathrm{~mA} / \mathrm{V}^{2}\). Let \(I_{\text {Bias }}=200

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